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    AO4407AL

    Abstract: No abstract text available
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL PDF

    kbc 1098

    Abstract: KBC1098-NU smsc kbc 1091 kbc1098 Smsc kbc1098 MMBT3904WH 2N7002DWH smsc kbc 1098 HCB2012KF-121T50 RTM890N-632-GRT
    Text: A B C D E 1 1 Compal Confidential Schematics Document 2 2 INTEL AUBURNDALE with IBEX core logic Cartier UMA 3 3 LA-4902P 2009-12-07 REV:1.0 4 4 Compal Secret Data Security Classification 2008/09/15 Issued Date 2009/12/31 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		LA-4902P kbc 1098 KBC1098-NU smsc kbc 1091 kbc1098 Smsc kbc1098 MMBT3904WH 2N7002DWH smsc kbc 1098 HCB2012KF-121T50 RTM890N-632-GRT PDF

    KB930

    Abstract: ENE KB930QF A1 rtd2132 rtd2132s RTL8111E RT8205Lzqw LA-7552P KB930QF A1 ENE KB930 rts5137
    Text: A B C D E 1 1 Compal Confidential 2 2 QBL50 Schematics Document AMD Sabine APU Llano / Hudson M2_M3 / Vancouver Whistler UMA only / PX Muxless with BACO 3 3 2010-02-16 LA-7552P REV: 0.03 4 4 2010/08/04 Issued Date 2010/08/04 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		QBL50 LA-7552P LA-4902P KB930 ENE KB930QF A1 rtd2132 rtd2132s RTL8111E RT8205Lzqw KB930QF A1 ENE KB930 rts5137 PDF

    AO4407A

    Abstract: AO4407AL AO4407
    Text: AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		AO4407A AO4407A/L AO4407A AO4407AL -AO4407AL AO4407 PDF