Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN

APT801R2DN

Abstract: APT5085DN
Contextual Info: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN

apt4020an

Contextual Info: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN

Contextual Info: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN

APT1001R1HN

Abstract: APT1001R3HN APT901R1HN APT901R3HN
Contextual Info: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

443h

Contextual Info: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001R1AN

Abstract: APT1001R3AN
Contextual Info: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBVR

Contextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: ADVANCED POW ER Te c h n o l o g y APT1001R1SN 1000V 10.5A 1.1 Ofl POWER MOS IV' N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS >D All Ratings: T c = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage

TO-204AE Package

Contextual Info: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

TO-258

Abstract: d 434
Contextual Info: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Contextual Info: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1001RBVFR

Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT1001R1BNR

Abstract: 1001R1
Contextual Info: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

Contextual Info: APT1001R1BFLC 1000V POWER MOS VITM 11A 1.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Contextual Info: APT1001R1AVR • R A dvanced W .\A pow er Te c h n o lo g y " 9a 1000v 1.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®

1001r1bn

Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR
Contextual Info: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

1001r1bn

Abstract: 130Q APT1001R3BN diode 1000V
Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.

Contextual Info: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.