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    APT1001 Price and Stock

    Microchip Technology Inc APT1001RBVRG

    MOSFET N-CH 1000V 11A TO247
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    DigiKey APT1001RBVRG Tube 67 1
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    Mouser Electronics APT1001RBVRG 190
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    Microchip Technology Inc APT1001RBVRG
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    Onlinecomponents.com APT1001RBVRG
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    TME APT1001RBVRG 1
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    NAC APT1001RBVRG Tube 27
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    Microchip Technology Inc APT1001RBN

    MOSFET N-CH 1000V 11A TO247AD
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    Microchip Technology Inc APT1001R1BN

    MOSFET N-CH 1000V 10.5A TO247AD
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    Microchip Technology Inc APT1001RSVRG

    MOSFET N-CH 1000V 11A D3PAK
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    DigiKey APT1001RSVRG Tube 40
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    Avnet Americas APT1001RSVRG Tube 26 Weeks 40
    • 1 $15.14
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    Mouser Electronics APT1001RSVRG
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    Newark APT1001RSVRG Bulk 40
    • 1 $15.14
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    Microchip Technology Inc APT1001RSVRG
    • 1 $15.14
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    Microchip Technology Inc APT1001RBVFRG

    MOSFET N-CH 1000V 11A TO247
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    DigiKey APT1001RBVFRG Tube 40
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    Mouser Electronics APT1001RBVFRG
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    Verical APT1001RBVFRG 10 5
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    Microchip Technology Inc APT1001RBVFRG
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    NAC APT1001RBVFRG Tube 25
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    Find more APT1001 price and stock on Findchips.com

    APT1001 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT1001 Advanced Power Technology Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Original PDF
    APT1001R1AVR Advanced Power Technology POWER MOS V 1000V 9A 1.100 Ohm Original PDF
    APT1001R1AVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R1BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD Original PDF
    APT1001R1BNR Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT1001R1HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R1HVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT1001R1HVR Unknown High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced Original PDF
    APT1001R1SN Advanced Power Technology Power MOS IV Scan PDF
    APT1001R3BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R3HN Advanced Power Technology High Voltage Power MOSFETs Scan PDF
    APT1001R6BFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT1001R6BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1001R6BFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 8A TO-247 Original PDF
    APT1001R6BLL Advanced Power Technology POWER MOS 7 MOSFET Original PDF
    APT1001R6BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT1001R6SFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF

    APT1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT1001RBVR

    Abstract: No abstract text available
    Text: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVR O-247 O-247 APT1001RBVR

    TO-204AE Package

    Abstract: No abstract text available
    Text: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE


    Original     		PDF APT1001R1AVR 100mS O-204AE) TO-204AE Package

    TO-258

    Abstract: d 434
    Text: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE


    Original     		PDF APT1001R1HVR 100mS O-258 TO-258 d 434

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    APT1001RBVFR

    Abstract: No abstract text available
    Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		PDF APT1001RBVFR O-247 O-247 APT1001RBVFR

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1BFLC 1000V POWER MOS VITM 11A 1.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT1001R1BFLC O-247 O-247 APT1001R1BFLC

    Untitled

    Abstract: No abstract text available
    Text: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT1001RBVFR APT1001RSVFR O-247 O-247 APT1001RBVFR

    Untitled

    Abstract: No abstract text available
    Text: APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL Typical Performance Curves 8A 1.60Ω 1000V POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ®


    Original     		PDF APT1001R6BFLL APT1001R6BFLL APT1001R6SFLL O-247

    Untitled

    Abstract: No abstract text available
    Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN


    OCR Scan     		PDF APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN

    APT801R2DN

    Abstract: APT5085DN
    Text: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN


    OCR Scan     		PDF APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN

    apt4020an

    Abstract: No abstract text available
    Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN


    OCR Scan     		PDF APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN


    OCR Scan     		PDF APT1001R6BN 1001R6BN O-247AD

    APT1001R1HN

    Abstract: APT1001R3HN APT901R1HN APT901R3HN
    Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT1001R1HVR O-258 APT1001R1HVR

    APT1001R1AN

    Abstract: APT1001R3AN
    Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y APT1001R1SN 1000V 10.5A 1.1 Ofl POWER MOS IV' N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS >D All Ratings: T c = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage


    OCR Scan     		PDF APT1001R1SN APT1001R1SN

    s3v12

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • Q D APT1001RBN APT901RBN Os 1000V 11.0A 1.00U 900V 11.0A 1.000 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter


    OCR Scan     		PDF APT1001RBN APT901RBN APT1001R/901RBN O-247AD s3v12

    APT1001R1BNR

    Abstract: 1001R1
    Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: APT1001R1AVR • R A dvanced W .\A pow er Te c h n o lo g y " 9a 1000v 1.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT1001R1AVR 1000v APT1001R1AVR 00A/ns IL-STD-750

    1001r1bn

    Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR
    Text: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG


    OCR Scan     		PDF APT1001RBNR APT1001R-18NR APT1001R1BNR APT1001R/1001R1 O-247AD 1001r1bn APT1001R-18NR

    APT901RBN

    Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
    Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN


    OCR Scan     		PDF 000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN

    1001r1bn

    Abstract: 130Q APT1001R3BN diode 1000V
    Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD