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    Eaton Bussmann BK-ATC-20

    FUSE AUTO 20A 32VDC BLADE ATO
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    DigiKey BK-ATC-20 Bulk 771 1
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    Vishay Barry ATC2010CT-1000JN-93TR

    DC-5GHZ 5W AL2O3 SURFACE MOUNT C
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    DigiKey ATC2010CT-1000JN-93TR Cut Tape 423 1
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    Vishay Barry ATC2010CT-0300JN-93TR

    DC-3GHZ 5W AL2O3 SURFACE MOUNT C
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    DigiKey ATC2010CT-0300JN-93TR Cut Tape 415 1
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    ATC2010CT-0300JN-93TR Digi-Reel 415 1
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    Vishay Barry ATC2010CT-0100JN-93TR

    DC-3GHZ 5W AL2O3 SURFACE MOUNT C
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    DigiKey ATC2010CT-0100JN-93TR Digi-Reel 378 1
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    ATC2010CT-0100JN-93TR Cut Tape 378 1
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    Vishay Barry ATC2010CT-0200JN-93TR

    DC-3GHZ 5W AL2O3 SURFACE MOUNT C
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    DigiKey ATC2010CT-0200JN-93TR Cut Tape 335 1
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    ATC2010CT-0200JN-93TR Digi-Reel 335 1
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    ATC20 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC20 Atmel ATC20 Summary Original PDF
    ATC20 Atmel Cell Based Asic Original PDF
    ATC-20 Cooper Bussmann Fuses, Circuit Protection, FUSE BLADE 20A 32V FAST YELL UL Original PDF
    ATC200A122KTN50XT American Technical Ceramics Ceramic Capacitor 1200PF 50V BX 0505 Original PDF
    ATC200A122KTN50XT American Technical Ceramics Ceramic Capacitor 1200PF 50V BX 0505 Original PDF
    ATC 2026 Astro Tool Tools - Insertion, Extraction - REM. TOOL-TUNING FORK CONTACTS Original PDF
    ATC 2035 Astro Tool Tools - Insertion, Extraction - TOOL REMOVAL 22 GA Original PDF
    ATC-2035 Astro Tool Insertion, Extraction, Tools, TOOL REMOVAL 22 GA Original PDF
    ATC 2036 Astro Tool Tools - Insertion, Extraction - TOOL REMOVAL 22 GA Original PDF
    ATC-2036 Astro Tool Insertion, Extraction, Tools, TOOL REMOVAL 22 GA Original PDF
    ATC-2040 Astro Tool Insertion, Extraction, Tools, TOOL REMOVAL 20 GA Original PDF
    ATC 2040 Astro Tool Tools - Insertion, Extraction - TOOL REMOVAL 20 GA Original PDF
    ATC 2046-100 Astro Tool Tools - Insertion, Extraction - COMPLIANT PIN INS AND REM TOOL Original PDF
    ATC 2046-L Astro Tool Tools - Insertion, Extraction - TOOL REMOVAL 20 GA IMPACT Original PDF
    ATC-2046-L Astro Tool Insertion, Extraction, Tools, TOOL REMOVAL 20 GA IMPACT Original PDF
    ATC 2053 Astro Tool Tools - Insertion, Extraction - TOOL INSERTION TWEEZER 22 GA Original PDF
    ATC-2053 Astro Tool Insertion, Extraction, Tools, TOOL INSERTION TWEEZER 22 GA Original PDF
    ATC 2053-70 Astro Tool Tools - Insertion, Extraction - TOOL INSERTION TWEEZER 22 GA Original PDF
    ATC-2053-70 Astro Tool Insertion, Extraction, Tools, TOOL INSERTION TWEEZER 22 GA Original PDF
    ATC 2062 Astro Tool Tools - Insertion, Extraction - TOOL REMOVAL 16 GA Original PDF

    ATC20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC200-1000-0004

    Abstract: ATM200-001 ATC200-1000 ATC-200 Andrew remote electrical tilt DB9 RJ45 RS485
    Text: Andrew Teletilt Part Number: ATC200-1000 Series Introducing: Teletilt ™ ATC200-1000 AISG Compatible Antenna Management System Remote Control Variable Electrical Downtilt - Rapid payback - Fast and flexible adjustment of antenna downtilt - No interruption of service


    Original     		PDF ATC200-1000 ATM200-001 ATCB-A01 RS232 ATC200-1000-0001 ATC200-1000-0002 ATC200-1000-0004 ATC-200 Andrew remote electrical tilt DB9 RJ45 RS485

    "asynchronous Dual-Port RAM"

    Abstract: ATMEl 326 ATC20 IO33 PC18B01 PC18B02 32K 4K x 8 Synchronous Dynamic RAM atmel 314
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC20 Core and I/O Cells Designed to Operate with VDD = 1.8V ± 0.15V as Main Target Operating Conditions • IO25 and IO33 Pad Libraries Provide Interfaces to 2.5V and 3V Environments


    Original     		PDF ATC20 ATC20 1361AS 04/00/0M "asynchronous Dual-Port RAM" ATMEl 326 IO33 PC18B01 PC18B02 32K 4K x 8 Synchronous Dynamic RAM atmel 314

    atmel 268

    Abstract: ATC20 IO33 PC18B01 PC18B02 OSC33
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC20 Core and I/O Cells Designed to Operate with VDD = 1.8V ± 0.15V as Main Target Operating Conditions • IO25 and IO33 Pad Libraries Provide Interfaces to 2.5V and 3V Environments


    Original     		PDF ATC20 1361BS atmel 268 IO33 PC18B01 PC18B02 OSC33

    "saturation arithmetic"

    Abstract: Atmel oak dsp core
    Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – ATC35/ATL35 - 2 mW/MIPS at 3.3V – ATC25/ATL25 - 1 mW/MIPS at 2.5V – ATC20/ATL20 - 0.6 mW/MIPS at 1.8V High Performance:


    Original     		PDF 16-bit ATC35/ATL35 ATC25/ATL25 ATC20/ATL20 5V/85 "saturation arithmetic" Atmel oak dsp core

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    ES50N18LA2

    Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
    Text: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure


    Original     		PDF PTX19CL-BS 12N9-4B-1 CB14-A2 CB12C-A CB30CL-B PTX14L-BS ES50N18LA2 YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    air variable capacitor

    Abstract: LET9045C M243 365 pF variable capacitor
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9045C 2002/95/EC LET9045C air variable capacitor M243 365 pF variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    sandisk micro sd

    Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
    Text: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers


    Original     		PDF CH-1705 3271B sandisk micro sd digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		PDF MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    LET9045f

    Abstract: 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045
    Text: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9045F 2002/95/EC LET9045F 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		PDF SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR

    Untitled

    Abstract: No abstract text available
    Text: ATC Series, Fast Acting Time-Current Characteristic Curves–Average Melt AMPERE RATING 7.5 10 15 20 25 30 40 3 4 5 RoHS 2002/95/EC 100 Dimensional Data 5.25mm .207” 12.5mm .492” 4.13mm .163” 19.1mm .752” SPECIFICATIONS Body Color Black Gray Violet


    Original     		PDF 2002/95/EC E56412 1A5600 OC-99

    40899

    Abstract: 50-045-000 RCA microwave oscillator Amphenol Assembly instructions ta8440 RCA-40899 12ghz amplifier transistor Hermetic Ceramic I567 sealectro 2.1 amplifier circuit diagram
    Text: File No. 538 RF P o w er Transisto rs S o lid S t a t e D iv is io n d n fiQ fl W Ö S jö 40899 6 - and 2-W , 2 .3 -GHz E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors JE DEC TO -215A A For Microwave Power Am plifiers, FundamentalFrequency Oscillators, and Frequency Multipliers


    OCR Scan     		PDF O-215AA RCA-40898 RCA-40899 40899 50-045-000 RCA microwave oscillator Amphenol Assembly instructions ta8440 12ghz amplifier transistor Hermetic Ceramic I567 sealectro 2.1 amplifier circuit diagram