Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BAW62 Search Results

    SF Impression Pixel

    BAW62 Price and Stock

    Rochester Electronics LLC BAW62

    DIODE GEN PURP 75V 300MA DO35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAW62 Bulk 193,684 11,539
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC BAW62,143

    DIODE GEN PURP 75V 250MA ALF2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAW62,143 Bulk 20,000 13,172
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    onsemi BAW62

    DIODE GEN PURP 75V 300MA DO35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAW62 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors BAW62,113

    DIODE GEN PURP 75V 250MA ALF2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAW62,113 Cut Tape 1
    • 1 $0.19
    • 10 $0.19
    • 100 $0.19
    • 1000 $0.19
    • 10000 $0.19
    		Buy Now
    BAW62,113 Reel 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02457
    		Buy Now

    NXP Semiconductors BAW62,133

    DIODE GEN PURP 75V 250MA ALF2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAW62,133 Ammo Pack
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more BAW62 price and stock on Findchips.com

    BAW62 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAW62 EIC Semiconductor High Speed Switching Diodes Original PDF
    BAW62 Fairchild Semiconductor High Conductance Fast Diode Original PDF
    BAW62 Fairchild Semiconductor High Conductance Low Leakage Diode Original PDF
    BAW62 NXP Semiconductors BAW62 - High-speed diode - Cd max.: 2 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 5000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=100mA mV; VR max: 75 V Original PDF
    BAW62 Philips Semiconductors High-speed diode Original PDF
    BAW62 Philips Semiconductors High Speed Diode Original PDF
    BAW62 Mullard Quick Reference Guide 1977/78 Scan PDF
    BAW62 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAW62 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BAW62 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BAW62 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BAW62 Unknown HIGH SPEED SILICON DIODE Scan PDF
    BAW62 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BAW62 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BAW62 Unknown Cross Reference Datasheet Scan PDF
    BAW62 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BAW62 National Semiconductor Silicon Single Junction Diodes Scan PDF
    BAW62 National Semiconductor Diode Pro Electron Series Scan PDF
    BAW62 National Semiconductor Pro Electron Diode Series Scan PDF
    BAW62 National Semiconductor Diode - Pro Electron Series Scan PDF

    BAW62 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CS9013

    Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
    Text: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72


    Original     		PDF BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY19 CS9013 CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac

    Untitled

    Abstract: No abstract text available
    Text: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA 1.00 (25.4) min.


    Original     		PDF BAW62 DO-204AH) DO-35

    Untitled

    Abstract: No abstract text available
    Text: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA • Pb / RoHS Free


    Original     		PDF BAW62 DO-204AH) DO-35

    BAW62

    Abstract: transistor BAW62 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION


    Original     		PDF M3D176 BAW62 DO-35) BAW62 transistor BAW62 MAM246

    BAW62

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION


    Original     		PDF M3D176 BAW62 DO-35) BAW62 MAM246 MAM246

    Untitled

    Abstract: No abstract text available
    Text: BAW62 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current


    Original     		PDF BAW62 DO-35 BAW62

    Untitled

    Abstract: No abstract text available
    Text: BAW62 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current


    Original     		PDF BAW62 DO-35

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package


    Original     		PDF M3D176 BAW62 DO-35) BAW62 MAM246

    BAW62

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package


    Original     		PDF M3D176 BAW62 DO-35) BAW62 MAM246 MAM246

    BAW62

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package


    Original     		PDF M3D176 BAW62 DO-35) BAW62 MAM246 MAM246

    BAW62

    Abstract: transistor BAW62 DO-204AH
    Text: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA • Pb / RoHS Free


    Original     		PDF BAW62 DO-204AH) DO-35 BAW62 transistor BAW62 DO-204AH

    SBAS16DXV6T1G

    Abstract: No abstract text available
    Text: BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available


    Original     		PDF BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G AEC-Q101 OT-563 BAS16DXV6/D

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    BAS16WT1

    Abstract: BAS16WT1G BAW62 diode marking code A6
    Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)


    Original     		PDF BAS16WT1 BAS16WT1/D BAS16WT1 BAS16WT1G BAW62 diode marking code A6

    SmD TRANSISTOR a77

    Abstract: SmD TRANSISTOR a75 tda4886 rfb 7808 A77 smd A86 SMD bav21 a82 SmD TRANSISTOR a82 TRANSISTOR c104 BAW62 SMD
    Text: INTEGRATED CIRCUITS DATA SHEET TDA4887PS 160 MHz bus-controlled monitor video preamplifier Product specification File under Integrated Circuits, IC02 2001 Oct 19 Philips Semiconductors Product specification 160 MHz bus-controlled monitor video preamplifier


    Original     		PDF TDA4887PS SCA73 753504/01/pp68 SmD TRANSISTOR a77 SmD TRANSISTOR a75 tda4886 rfb 7808 A77 smd A86 SMD bav21 a82 SmD TRANSISTOR a82 TRANSISTOR c104 BAW62 SMD

    BAW62

    Abstract: 1970 oscilloscope T0309 T-03-09
    Text: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA


    OCR Scan     		PDF BAW62 DO-35 OD-27 DO-35) 1970 oscilloscope T0309 T-03-09

    diode rj 93

    Abstract: No abstract text available
    Text: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage


    OCR Scan     		PDF DQ2b352 BAW62 DO-35 BAW62 OD-27 DO-35) 7Z10519 D02b35e diode rj 93

    BAW62

    Abstract: No abstract text available
    Text: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage


    OCR Scan     		PDF DD2b352 BAW62 DO-35 BAW62 OD-27 DO-35) 7Z66863

    IR5 20v

    Abstract: BAW62 BAW62M LLBAW62
    Text: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M BAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics


    OCR Scan     		PDF BAW62 BAW62M LLBAW62 LL-34 100mA IR5 20v

    DO213AC

    Abstract: DO-213AC DIODE 1J DO-35 BAY19 bay82
    Text: OETTOS^ Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor" Pro Electron Diode Series ETiïOhOO Leaded Switching Diodes V Min (nA) Min V,m (V) Max BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62


    OCR Scan     		PDF BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY71 DO213AC DO-213AC DIODE 1J DO-35 BAY19 bay82

    BAW62

    Abstract: FR 309 diode
    Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage


    OCR Scan     		PDF BAW62 BAW62 EAVV62 FR 309 diode

    MLA428-1

    Abstract: BAW62
    Text: Philips Semiconductors Product specification High-speed diode BAW62 FEA TU R E S D E S C R IP T IO N • Hermetically sealed leaded glass S O D 27 D O -35 package The BAW 62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S O D 2 7 (D O -35)


    OCR Scan     		PDF BAW62 DO-35) BAW62 MLA428-1

    BAV105

    Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30


    OCR Scan     		PDF DO-35 DO-34 OD123 OD80C OD110 OT143 OT323/ BAW62/ BAV21 BAV10 BAV105 BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12

    bc5478

    Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
    Text: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L


    OCR Scan     		PDF BZV49-C10 BZV85-C10 BZV49-C11 BZV85-C11 BZV49-C12 S0T89 BZV85-C12 BZV49-C13 BZV85-C13 bc5478 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd