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    BC850W Search Results

    BC850W Datasheets (10)

    Part
    ECAD Model
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    Description
    Datasheet Type
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    BC850W
    Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF 123.48KB 2
    BC850W
    Infineon Technologies PNP Silicon AF Transistors Original PDF 235.3KB 8
    BC850W
    NXP Semiconductors NPN general purpose transistors Original PDF 64.93KB 7
    BC850W
    Philips Semiconductors NPN general purpose transistors Original PDF 49.94KB 8
    BC850W
    Philips Semiconductors Small-signal Transistors Original PDF 4.59KB 1
    BC850W
    Philips Semiconductors NPN General Purpose Transistor Original PDF 82.38KB 3
    BC850W
    Siemens NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF 278.63KB 8
    BC850W
    Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF 465.63KB 37
    BC850W
    Siemens Cross Reference Guide 1998 Original PDF 27.35KB 7
    BC850WT/R
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 43.32KB 1

    BC850W Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Contextual Info: BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original
    BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    Contextual Info: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan
    BC849W; BC850W OT323 MBC670 BC849W BC849BW; BC850BW PDF

    BC849BW

    Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W


    Original
    M3D102 BC849W; BC850W OT323 BC859W BC860W. SCA63 115002/00/03/pp8 BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW PDF

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Contextual Info: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original
    BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W PDF

    MARKING CODE 21E SOT323

    Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon PDF

    BC8488

    Abstract: H12E BC848 equivalent 1bs sot323
    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323 PDF

    847C

    Abstract: BC846W BC847W BC848W BC849W BC850W
    Contextual Info: DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 150 mWatts CURRENT SOT-323 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) • Collector current IC = 100mA • Both normal and Pb free product are available :


    Original
    BC846W BC847W BC848W BC849W BC850W OT-323 100mA OT-323, MIL-STD-202, 846AW 847C PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Contextual Info: BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original
    BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    BC850AW

    Abstract: BC847W BC846AW BC846BW BC846W BC848W BC849W BC850BW BC850W
    Contextual Info: BC846W~850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50


    Original
    BC846W OT-323 BC846W BC847W BC848W BC849W BC850W BC850AW BC847W BC846AW BC846BW BC848W BC849W BC850BW BC850W PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING


    Original
    M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7 PDF

    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW PDF

    D024-M

    Abstract: D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE
    Contextual Info: bbSB^l Philips Semiconductors ODSMMbö T7T IAPX NPN general purpose transistor amer FEATURES philips Product specification BC849W; BC850W /d i s c r e t e b7E ]> PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan
    0D24Mbà BC849W; BC850W OT323 -SOT323 BC849W: BC849BW: BC849CW: BC850W: BC850BW: D024-M D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE PDF

    1bs sot323

    Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W PDF

    MARKING CODE 21E SOT323

    Abstract: sot323 marking code A.C BC8488
    Contextual Info: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original
    BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C BC8488 PDF

    Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC849W; BC850W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector other audio-frequency equipment.


    OCR Scan
    OT323 BC859W BC860W. BC849W; BC850W BC849W BC849BW BC849CW BC850W BC850BW PDF

    BCS49

    Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi


    OCR Scan
    BC849W; BC850W OT323 BC849W BC850W BCS49 PDF

    Q 817

    Abstract: str 450 a BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification


    Original
    M3D102 BC849W; BC850W OT323 BC859W BC860W. SCA54 117047/00/02/pp8 Q 817 str 450 a BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    DIN 6784

    Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
    Contextual Info: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original
    BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856BW OT323 DIN 6784 MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Contextual Info: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original
    BC846W BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Contextual Info: BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original
    BC846W. BC850W BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W PDF

    Contextual Info: BC850W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A) Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)30


    Original
    BC850W Freq100M PDF

    BC849BW

    Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES


    Original
    M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7 BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W PDF

    BC846AW

    Abstract: BC846BW BC846CW BC846W BC847W BC848W BC849W BC850AW BC850BW BC850W
    Contextual Info: BC846W~BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC846W BC847W BC848W BC849W BC850W VCBO 80


    Original
    BC846W BC850W OT-323 BC846W BC847W BC848W BC849W BC846AW BC846BW BC846CW BC847W BC848W BC849W BC850AW BC850BW BC850W PDF