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ROHM Semiconductor BD9515NUX-E2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ameya Holding Limited	BD9515NUX-E2		100		1	1 $0.21 10 $0.21 100 $0.15415 1000 $0.14008 10000 $0.12948	Buy Now

BD951 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
BD951	Continental Device India	TO-220 Plastic Package	Original	PDF
BD951	Philips Semiconductors	Silicon Epitaxial Base Power Transistors	Original	PDF
BD951	Continental Device India	NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS	Scan	PDF
BD951	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BD951	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
BD951	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BD951	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BD951	Unknown	Transistor Replacements	Scan	PDF
BD951	Unknown	Transistor Replacements	Scan	PDF
BD951	Unknown	Cross Reference Datasheet	Scan	PDF
BD951	Unknown	Transistor Replacements	Scan	PDF
BD951	Unknown	Transistor Replacements	Scan	PDF
BD951	Unknown	Transistor Replacements	Scan	PDF
BD951	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

BD951	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BD951	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BD951F	Philips Semiconductors	Silicon Epitaxial Power Transistors	Original	PDF
BD951F	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BD951F	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

BD951 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD951 Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956	Original	O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD949 BD950 BD952 BD953 BD954 BD955 BD956	PDF
BD951 Abstract: BD952 pnp 500ma 40v Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD952 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD951 APPLICATIONS ·Designed for power amplifier and switching applications	Original	BD952 -500mA BD951 BD951 BD952 pnp 500ma 40v	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS	Original	O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956	PDF
BD951 Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS	Original	O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD952 BD949 BD950 BD953 BD954 BD955 BD956	PDF
BD955 Abstract: NPN Transistor TO220 VCEO 80V 100V 2a 100v NPN BD949 BD951 Text: BD949 BD953 BD951 BD955 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 4.19 4.82 NPN POWER TRANSISTORS 1.14 1.39 9.01 9.52 12.70 13.71 2.66 3.42 1.01 Rad. 1.52 1 2 3 NPN Transistors in a plastic TO–220 package.	Original	BD949 BD953 BD951 BD955 BD950 220AB BD955 NPN Transistor TO220 VCEO 80V 100V 2a 100v NPN BD949 BD951	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
Untitled Abstract: No abstract text available Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90	OCR Scan	BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956	PDF
951F Abstract: No abstract text available Text: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A	OCR Scan	BD949F; BD951F BD953F; BD955F bb53T31 951F	PDF
bd955 Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60	OCR Scan	BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F	PDF
HU09 Abstract: bd955 BD953F BD949F BD950F BD951F BD952F BD954F BD955F BD956F Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 0 0 4 3 1 0 b ST3 « P H I N T- SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each ina SOT186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F.	OCR Scan	BD949F; BD951F BD953F; BD955F 7110fl2b 004310b OT186 BD950F, BD952F, BD954F HU09 bd955 BD953F BD949F BD950F BD952F BD955F BD956F	PDF

b0951 Abstract: bu508at b0949 BD243B BD243C BD949 BD951 BD953 BD955 BU406 Text: TO-220 Power Package Transistors NPN . Electrical Characteristic« (Ta=25C, Unless Otherwise Specified) Maximum Ratings Type No. t Pd (W) (V) Min Tc=25°c (A) 80 5 65 100 100 5 BD949 60 60 BD951 80 BD953 'coo (HA) Max Ve a Min Max fc» (A) « 'c (mA)	OCR Scan	O-220 BD243B BD243C BD949 BD951 BD953 BD955 BU406 BUV46 CD3968 b0951 bu508at b0949	PDF
T1P110 Abstract: BD243B BD243C BD949 BD951 BD953 BD955 BU406 BU407 BU505 Text: TO-220 Power Package Transistors NPN Electrical Characteristics (T»=25"C, Unless Otherwise Specified) Maximum Ratings Type No. PB (W) Tc=25°c V C80 ^CEO ^EBO (V) Mifl (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 'c80	OCR Scan	O-220 BD243B BD243C BD949 BD951 BD953 BD955 CD3968 CSD1025 MJE13005 T1P110 BU406 BU407 BU505	PDF
BD954 Abstract: No abstract text available Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER	OCR Scan	BD949, BD950, BD951, BD953, BD955 BD952, BD954, BD956 BD954	PDF
952F Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage	OCR Scan	BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F	PDF
B0952 Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950 Text: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R	OCR Scan	BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 B0952 b0951 BD951 BD954 b0949 B0950 npn transistors,pnp transistors BD949 BD950	PDF
Untitled Abstract: No abstract text available Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.	OCR Scan	BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO	PDF
Untitled Abstract: No abstract text available Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.	OCR Scan	BD949F; BD951F BD953F; BD955F 7110fl2b 004310b 7110aEb QDM3107	PDF
JE3055T Abstract: je13007 Text: TO-220 Power Package Transistors NPN Electrical Characteristic« (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. ^CBO V CE0 ^EBO (V) Min (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 h EE e Min Max 'c* (A) V CE	OCR Scan	O-220 BD243B BD243C BD949 BD951 MJE13005 JE13007 S1000 JE3055T SJE1349 JE3055T je13007	PDF
T1P42C Abstract: bd534j T1P102 Text: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70	OCR Scan	O-220 O-220 TIP125 TIP126 TIP127 TIP135 TIP136 T1P42C bd534j T1P102	PDF
T1P42C Abstract: No abstract text available Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN	OCR Scan	O-220 O-220 O-237-2 00014QÃ T1P42C	PDF

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BD951 Search Results

BD951 Price and Stock

ROHM Semiconductor BD9515NUX-E2

BD951 Datasheets (19)

BD951 Datasheets Context Search

BD951

BD951

Untitled

BD951

BD955

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

Untitled

951F

bd955

HU09

b0951

T1P110

BD954

952F

B0952

Untitled

Untitled

JE3055T

T1P42C

T1P42C