BFQ295
Abstract: BFQ296 sot128b
Text: Preliminary specification Philips Semiconductors PNP HDTV video transistor '7 ^ 3 3 5bE T> PH IL IP S I N T E R N A T I O N A L FEATURES • BFQ295 7110fl2b DD M5 b ? 7 132 ■ P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance
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BFQ295
711002b
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
sot128b
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BFQ295
Abstract: BFQ296
Text: Philip^emiçonductore ^ b b 5 3 T 31 Q0317flfl b 37 W A P X Prelim inary specification PNP HDTV video transistor BFQ295 N AUER FEA TU R ES PHILIPS/DISCRETE b^E PINNING PIN • High breakdown voltages • Low output capacitance 1 emitter DESCRIPTION • High gain bandwidth product
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bb53T31
BFQ295
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
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BFQ295
Abstract: BFQ296
Text: Prelim inary specification Philips Sem iconductors PNP HDTV video transistor 7 ^ 3 3 PHILIPS INTERNATIONAL FEATURES 5bE D • BFQ295 711Qfl2b QDM5b?7 132 « P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter •
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BFQ295
7110fl2b
QDM5b77
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ bbSB^Bl 0 Q3 1 7 flfl b37 M APX Preliminary specification PNP HDTV video transistor BFQ295 — FEATURES N AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ295
BFQ296.
BFQ295
OT128B
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711Gfl2b
Abstract: IEC134 BFQ295 BFQ296
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor philips BFQ296 ShE T> international FEATURES 711Gfl2b 0G4Sb7fl D7T « P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
711Gfl2b
BFQ295.
BFQ296
OT128B
OT128B.
IEC134
BFQ295
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transistor 1002
Abstract: transistor 835 BFQ295 BFQ296
Text: b b 5 3 T 31 D0317fl^ 573 • APX Preliminary specification Philips Semiconductors NPN HDTV video transistor —^ BFQ296 N FEATURES AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
transistor 1002
transistor 835
BFQ295
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BFQ161
Abstract: SOT37
Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO
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OT-323
OT-37
OT-23
BFQ161
SOT37
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BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
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OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b5 3 T 31 D0317fl^ 573 | • APX Preliminary specification NPN HDTV video transistor ^ BFQ296 N FE A T U R E S AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages • Low output capacitance PIN 1 emitter • High gain bandwidth product
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D0317fl^
BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
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BFQ295
Abstract: BFQ296
Text: Philips Semiconductors 7 ^3 3 NPN HDTV video transistor philips ShE J> international FEATURES Preliminary specification BFQ296 7110û2b GD45fc>7ß 07T • PHIN PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
BFQ295
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