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    BFT29 Price and Stock

    PFLITSCH GmbH & Co KG BFT-29-29-29-BG

    T-CONNECTOR FOR CORRUGATED PIPES
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    DigiKey BFT-29-29-29-BG Bag 2
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    PFLITSCH GmbH & Co KG BFT-29-29-29-BK

    T-CONNECTOR FOR CORRUGATED PIPES
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    DigiKey BFT-29-29-29-BK Bag 2
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    • 100 $31.51
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    BFT29 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFT29 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=50-250 / fT(Hz)=100M / Pwr(W)=0.36 Original PDF
    BFT29 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFT29 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFT29 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFT29 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT29 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFT29 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFT29 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFT29 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT29 Semico Medium Power Transistors Scan PDF
    BFT29 Texas Instruments Discrete Devices 1978 Scan PDF
    BFT29X Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF

    BFT29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF BFT29 BFT30 BFT31 BFT29 BFT30 360mW O-206AA)

    BFT29X

    Abstract: No abstract text available
    Text: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29X O206AA) dat80 2-Aug-02 BFT29X

    Untitled

    Abstract: No abstract text available
    Text: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29X O206AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29X O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BFT29 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29 O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BFT29 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29 O206AA) 16-Jul-02

    BFT29

    Abstract: BFT30 BFT31 LE17
    Text: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF BFT29 BFT30 BFT31 BFT29 BFT30 360mW O-206AA) BFT31 LE17

    BFT29

    Abstract: No abstract text available
    Text: BFT29 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products


    Original     		PDF BFT29 O206AA) data80 2-Aug-02 BFT29

    NEC 2SC959

    Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
    Text: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18


    Original     		PDF MPS-A06 FMMT-A06 FMMTA06 MMBTA06 MPSA06 PMBTA06 5MBTA06 NEC 2SC959 BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959

    bcx40

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30


    OCR Scan     		PDF BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


    OCR Scan     		PDF BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829

    BC107 equivalent transistors

    Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent

    BCX60

    Abstract: BD370B BD370C BD370 BD371C bfr41 BFS94 BFW32 BD371B BFR18
    Text: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S > TYPE NO. X < -I o a. V C E S A T h fe CASE Pd (mW) 1 C (A ) V C EO (V ) min max 400 400 250 'c (mA) V CE (V ) 10 10 500 100 100 max fT min Cob C O M PLE­ max M EN TA RY (MHz) (pF) TYPE (V )


    OCR Scan     		PDF BCX25 O-92F BCX26 BCX26 BCX25 BCX40 BCX45 BCX46 BCX47 BCX48 BCX60 BD370B BD370C BD370 BD371C bfr41 BFS94 BFW32 BD371B BFR18

    BF177

    Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338

    BFR80

    Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
    Text: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m


    OCR Scan     		PDF fil331Ã BFQ37 5/10m BFQ38S 25min 5/50m BFR38 10/3m BFR52 BFR80 BFR79 BFR81 BFT69 BFW32 700M BFR52

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


    OCR Scan     		PDF BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829

    2N3053 equivalent

    Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
    Text: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005


    OCR Scan     		PDF BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5

    C495 transistor

    Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
    Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


    OCR Scan     		PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    CV7756

    Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued


    OCR Scan     		PDF CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 CV7756 bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    BCW93

    Abstract: BD370 BCW78 BCW79 BCW80 BCW90 BCW91 BCW92 BCW94 BCW95
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) 1 1 1 2 2 0.7 0.7 0.7 0.25 0.25 0.5 0.5 0.5 0.15 0.15 100 100 100 100+ 100+ 12 18 18 15 15


    OCR Scan     		PDF BCW78 BCW79 BCW80 BCW90 O-92F BCW92 BCW91 BCW93 BD370 BCW94 BCW95

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent