BDY55

Contextual Info: SavantIC Semiconductor Product Specification BDY55 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification. PINNING See Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

bdy56

Abstract: max6056
Contextual Info: BDY55, BDY56 BDY55, 56 NPN POWER TRANSISTORS Switching and Amplifier Circuits in Industrial and Commercial Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,20 5,72 16,64 17,15 11,15 12,25 26,67

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A

Contextual Info: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

J BDY56

Abstract: bdy55 BDY56
Contextual Info: F ile N u m b e r 1215 BDY55, BDY56 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors Devices fo r S w itch in g and A m p lifie r C irc u its in In d u s tria l and C o m m ercial A p p lic a tio n s Features: • M aximum operating area curves for dc and pulse operation

RCA-BDY55

Abstract: BDY56 RCA 17564 BDY55
Contextual Info: G E S OL I» ST ATE 3875081 DE |3fl7SDfll 0 D 1 7 S b 4 b QÌ G E SOLID STATE 01E 17564 D -Pro Electron Power Transistors File Number 1215 BDY55, BDY56 High-Current, High-Power, High-Speed

BDY77

Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74

BDY55

Contextual Info: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDY55

Contextual Info: Inchange Semiconductor Product Specification BDY55 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・LF large signal power amplification. PINNING See Fig.2 PIN DESCRIPTION 1

BDY56

Abstract: VCE-150 BDY55 Comset
Contextual Info: BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current

Contextual Info: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDY55X

Contextual Info: BDY55X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BDY55 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BDV25

Abstract: BDY25B BDY38 BDY96
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY27C BDY27CX BDY28 BDY28B BDY28C BDY29 BDY37 BDY38 BDY39 BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BDY54 BDY55 BDY55 CECC BDY56 BDY56 CECC

bd130

Abstract: BDY57 BLX84 BD142 BLx18 13 6 npn BDY20 BDY29 BDY94 BLX36
Contextual Info: IC VCEO Device Cont. Polarity MAX Type MAX VOLTS AMPS BD130 NPN 15.0 60 BD142 NPN 15.0 45 BDY20 NPN 15.0 60 BDY29 NPN 30.0 75 BDY37 NPN 16.0 140 BDY38 NPN 6.0 40 BDY39 NPN 15.0 60 BDY55 NPN 15.0 60 BDY56 NPN 15.0 120 BDY57 NPN 25.0 80 BDY58 NPN 25.0 125

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

BDY20

Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
Contextual Info: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BU2080

Contextual Info: TO-3 Power Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. V CBO V C E0 (V) Min (V) Min 1500 800 2SD1168P Pd 'c VebO (W) (A) (V) Min 0Tc=25°c 5 50 !cbo (PA) Max V CB @ (V) hpE 1000 1500 9

BDY38

Abstract: 2N3055HV BDY20 BU326A 2N3055 bu326 2N3773 2N4347 2N6253 2N6257
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-3 Metal Can Package 3 All dimensions are in mm. PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 2 1 TO-3 Power Package Transistors NPN Maximum Ratings Type No.