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    BLY48A Search Results

    BLY48A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLY48A Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=3 / Hfe=- / fT(Hz)=15M / Pwr(W)=40 Original PDF
    BLY48A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLY48A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLY48A Semelab Transistor Selection Guide Scan PDF
    BLY48A Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF

    BLY48A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BLY48A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		BLY48A O213AA) 30-Jul-02 PDF

    BLY48A

    Abstract: BLY48
    Text: BLY48A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		BLY48A O213AA) 1-Aug-02 BLY48A BLY48 PDF

    2SD369A

    Abstract: to-53 2SC1025 MJE2491 KT816V matsua
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M


    Original     		2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua PDF

    B0937

    Abstract: KT817G 2SC1984 B0241B 2SC1025 BUW64A to-53 2S093
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 45 50 SSP62B B0241B TIP31B 2N424A 2N424 BOT29B BOT29B BOT29BF B0179 2Nl647 2S094 2N2308 R4923 2SC489 2N3419 2N2983 BOT31BF BOT31BF MJE31B 2N4233 2N4233A 042Cl0 2N4075 2S0129 2S0297 2S0317A


    Original     		2S093 KT817V BLY47 BLY47A 2S033 BLY48 BLY48A 2S034 O-126var B0937 KT817G 2SC1984 B0241B 2SC1025 BUW64A to-53 PDF

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    BFX36

    Abstract: bss17 BFX81 BFY64 BFY84 250M BFW44 BFX11 BFX17 BFX29
    Text: SEMELAB LTD 37E D Ö1331Ö7 □□□□051 fl O p tio n 1'^ P o ,a rl,y * V CEO 'C cont hFEo Vce /Ic T039 T077 T039 T039 T039 150 45 40 60 65 50m 0.5 1 0.6 0.6 40min 90min 35min 50m’in 50-200 10/10m 5/lm 1/0.1 10.10m 0.4/10m 60M 130M 250M 100M 0.7 0.5 0.8


    OCR Scan     		BFW44 10/10m BFX11 90min BFX17 35min BFX29 BFX30 4/10m BFX34 BFX36 bss17 BFX81 BFY64 BFY84 250M PDF

    TIP27

    Abstract: TIP14 iso 1502 BLY48 TIP24 BLY47 BLY47A BLY48A BLY49 BLY49A
    Text: Silicon Power Transistors Type Case No. c^ o *” Maximum Ratings at y o E a T vase . . . . = 25°C C haracteristics T case - 25°C « o V CE SAT h FE c o « u v CBO V CEO V V V EBO (DC) V A Ptot !c W A M in. Max. Min. Max. •c •b Max. ft A A V MHz


    OCR Scan     		TIP14 TIP24 TIP27 BLY47A BLY48A BLY49A BLY50A BLY47 BLY48 BLY49 iso 1502 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF