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    BLY50 Search Results

    BLY50 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLY50 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package Original PDF
    BLY50 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLY50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLY50 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLY50 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    BLY50A Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=3 / Hfe=- / fT(Hz)=15M / Pwr(W)=40 Original PDF
    BLY50A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLY50A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLY50A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLY50A Semelab Transistor Selection Guide Scan PDF
    BLY50A Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    BLY50-S11 Beijing LEM Electronics Current Sensor Original PDF

    BLY50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLY50

    Abstract: No abstract text available
    Text: BLY50 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BLY50 O213AA) 1-Aug-02 BLY50

    BLY50A

    Abstract: No abstract text available
    Text: BLY50A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BLY50A O213AA) 1-Aug-02 BLY50A

    Untitled

    Abstract: No abstract text available
    Text: BLY50 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BLY50 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BLY50A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF BLY50A O213AA) 30-Jul-02

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


    Original     		PDF BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36

    TIP310

    Abstract: B0939 B0941 D510 B0581
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd


    Original     		PDF BOT31CF MJE31C B0581 2S035 2SC3567M B0939 B0939F TIP310 B0941 D510

    BLY10-S11

    Abstract: BLY20-S11 BLY50-S11
    Text: 电 流 传 感 器 BLY-S11系 列 用于测量直 交流及脉冲电流 原 IPN =10.50A 副边之间高度绝缘 电参数 BLY10-S11 原边额定电流 10 原边电流测量范围 20 副边额定电压 电源电压 电流消耗 绝缘测试交流电压有效值 50 Hz, 1分钟


    Original     		PDF BLY-S11 BLY10-S11 BLY20-S11 BLY50-S11 EN50178 4MOLEX5045-4 BLY10-S11 BLY20-S11 BLY50-S11

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    BSW66

    Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
    Text: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73


    OCR Scan     		PDF BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 120typ 2/10m 40min BSS50 BSW66 BU208A BSW67

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    BFY83

    Abstract: BLY48
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34


    OCR Scan     		PDF BFT37A BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFY83 BLY48

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


    OCR Scan     		PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BFX36

    Abstract: bss17 BFX81 BFY64 BFY84 250M BFW44 BFX11 BFX17 BFX29
    Text: SEMELAB LTD 37E D Ö1331Ö7 □□□□051 fl O p tio n 1'^ P o ,a rl,y * V CEO 'C cont hFEo Vce /Ic T039 T077 T039 T039 T039 150 45 40 60 65 50m 0.5 1 0.6 0.6 40min 90min 35min 50m’in 50-200 10/10m 5/lm 1/0.1 10.10m 0.4/10m 60M 130M 250M 100M 0.7 0.5 0.8


    OCR Scan     		PDF BFW44 10/10m BFX11 90min BFX17 35min BFX29 BFX30 4/10m BFX34 BFX36 bss17 BFX81 BFY64 BFY84 250M

    TIP27

    Abstract: TIP14 iso 1502 BLY48 TIP24 BLY47 BLY47A BLY48A BLY49 BLY49A
    Text: Silicon Power Transistors Type Case No. c^ o *” Maximum Ratings at y o E a T vase . . . . = 25°C C haracteristics T case - 25°C « o V CE SAT h FE c o « u v CBO V CEO V V V EBO (DC) V A Ptot !c W A M in. Max. Min. Max. •c •b Max. ft A A V MHz


    OCR Scan     		PDF TIP14 TIP24 TIP27 BLY47A BLY48A BLY49A BLY50A BLY47 BLY48 BLY49 iso 1502

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor