BU2522AX
Abstract: BU2522 NPN Transistor 1500V transistor 800V 1A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of pc
|
Original
|
BU2522AX
100mA;
BU2522AX
BU2522
NPN Transistor 1500V
transistor 800V 1A
|
PDF
|
BU2522A
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BU2522A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN
|
Original
|
BU2522A
BU2522A
|
PDF
|
BU2520A
Abstract: BU2522A BU2522AF BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522A
BU2520A
BU2522A
BU2522AF
BY228
|
PDF
|
BU2522AF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522AF
BU2522AF
|
PDF
|
BU2522AX
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2522AX Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
|
Original
|
BU2522AX
BU2522AX
|
PDF
|
BU2522AF
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors. PINNING PIN
|
Original
|
BU2522AF
BU2522AF
|
PDF
|
BU2520
Abstract: BU2522 BU2520AF BU2522A BU2522AF BY228
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522AF
BU2520
BU2522
BU2520AF
BU2522A
BU2522AF
BY228
|
PDF
|
BU2522AF
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2522AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
|
Original
|
BU2522AF
BU2522AF
|
PDF
|
BU2522AX
Abstract: BU2520AF BU2522A BU2522AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522AX
BU2522AX
BU2520AF
BU2522A
BU2522AF
|
PDF
|
BU2520A
Abstract: BU2522A BU2522AW BU2522AF
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522AW
BU2520A
BU2522A
BU2522AW
BU2522AF
|
PDF
|
BU2522A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BU2522A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN DESCRIPTION
|
Original
|
BU2522A
BU2522A
|
PDF
|
BU2520
Abstract: BU2522AF BU2522AX BU2520AF BU2522A BY228 BU2522
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
Original
|
BU2522AX
BU2520
BU2522AF
BU2522AX
BU2520AF
BU2522A
BY228
BU2522
|
PDF
|
BUT11APX equivalent
Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Text: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution
|
Original
|
bra785
IEC1000-3-2/EN61000-3-2
80plus
JICC61000-3-2
BUT11APX equivalent
diode BY229
BUT11APX
BU4508DX
plasma tv ic
BU2720DX
BUT11APX-1200
BU4507DX
BU4508DX equivalent
BU2520DF
|
PDF
|
BU4522AX
Abstract: BU4522AF BU4522AX equivalent
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.
|
Original
|
BU4522AX
BU4522AX
BU4522AF
BU4522AX equivalent
|
PDF
|
|
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
|
Original
|
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
|
PDF
|
BU2522A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522A
7110fl2b
BU2522A
|
PDF
|
100-P
Abstract: BU2522AF ScansUX30
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AF
711Qfi5b
QQ77fc
OT199;
711002b
0G77b33
100-P
ScansUX30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
|
OCR Scan
|
bb53R31
002flbi1fl
BU2522AF
|
PDF
|
BU2522AF
Abstract: BY228
Text: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
|
OCR Scan
|
BU2522AF
BU2522AF
BY228
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AX
1E-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AW
1E-04
IE-02
1E-06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AX
1E-06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
|
OCR Scan
|
BU2522AF
1E-06
|
PDF
|