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    BUR52 Search Results

    BUR52 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUR52 Semelab High Current NPN Silicon Transistor Original PDF
    BUR52 STMicroelectronics High Current NPN Silicon Transistor Original PDF
    BUR52 STMicroelectronics HIGH CURRENT NPN SILICON TRANSISTOR Original PDF
    BUR52 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan PDF
    BUR52 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUR52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUR52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUR52 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUR52S Semelab High Current NPN Silicon Transistor Original PDF

    BUR52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 'Izts.zuij <^>£.mi- -ondiictoi iJ-^ioaacti, Una. Cx TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . NPN TRANSISTOR . MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT


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    PDF BUR52 BUR52

    Untitled

    Abstract: No abstract text available
    Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52S O204AE) 1-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52 O204AA) 16-Jul-02

    to204ae

    Abstract: No abstract text available
    Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52S O204AE) 17-Jul-02 to204ae

    Untitled

    Abstract: No abstract text available
    Text: BUR52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52 O204AA) 31-Jul-02

    BUR52

    Abstract: No abstract text available
    Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BUR52 is a silicon Multiepitaxial Planar NPN


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    PDF BUR52 BUR52

    NPN 350W

    Abstract: BUR52
    Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)


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    PDF BUR52 O204AE) NPN 350W BUR52

    Untitled

    Abstract: No abstract text available
    Text: BUR52S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BUR52S O204AE) 18-Jun-02

    NPN 350W

    Abstract: BUR52
    Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)


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    PDF BUR52 O204AE) NPN 350W BUR52

    BUR52

    Abstract: No abstract text available
    Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.


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    PDF BUR52 BUR52

    Untitled

    Abstract: No abstract text available
    Text: BUR52S MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) HIGH CURRENT NPN SILICON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


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    PDF BUR52S O-204AA)

    P003I

    Abstract: bur52
    Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 ■ 2 DESCRIPTION


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    PDF BUR52 BUR52 P003I

    BUR52

    Abstract: No abstract text available
    Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN


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    PDF BUR52 BUR52

    BUR52

    Abstract: sgs-thomson TO-3
    Text: BUR52 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN


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    PDF BUR52 BUR52 sgs-thomson TO-3

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


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    PDF O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH

    BUR52

    Abstract: No abstract text available
    Text: SGS-THOMSON BUR52 ^DO^ ô E[L[i(SÏÏ^ [MD(Oi HIGH CURRENT HIGH SPEED, HIGH POWER DARLINGTONS DESCRIPTION The BUR52 is a silicon multiepitaxiai planar NPN transistor in modified Jedec TO-3 metal case, inten­ ded for use in switching and linear applications in


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    PDF BUR52 BUR52

    BUS11A

    Abstract: BUV11 BUT91
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS


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    PDF BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91

    Untitled

    Abstract: No abstract text available
    Text: rZ Z SGS-THOMSON ^7# ssaœ iiuiÊTO©«e8 BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


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    PDF BUR52 BUR52

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN W ITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


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    PDF BUR52 BUR52 P003I

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


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    PDF 0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


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    PDF BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP