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    STMicroelectronics BUV98AV

    TRANS NPN 450V 30A ISOTOP
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    Philips Semiconductors BUV98AV

    Power Bipolar Transistor, 30A I(C), 1-Element
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    ComSIT USA BUV98AV 105
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    Others BUV98A

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    Chip 1 Exchange BUV98A 9
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    BUV98A Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUV98A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUV98A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUV98A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV98A Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV98A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BUV98AF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV98AF STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV98AV STMicroelectronics NPN Transistor Power Module Original PDF
    BUV98AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV98AV STMicroelectronics NPN TRANSISTOR POWER MODULE Original PDF
    BUV98AV Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUV98AV Philips Semiconductors Silicon Diffused Power Transistors Scan PDF
    BUV98AV Philips Semiconductors High Speed, High Voltage Transistors Scan PDF
    BUV98AV STMicroelectronics NPN Transistor Power Module Scan PDF
    BUV98AV STMicroelectronics Shortform Data Book 1988 Short Form PDF

    BUV98A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV98AV

    Abstract: No abstract text available
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o


    Original     		PDF BUV98AV BUV98AV

    BUV98AV

    Abstract: SMPS IC 2003
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS


    Original     		PDF BUV98AV BUV98AV SMPS IC 2003

    BUV98AV

    Abstract: No abstract text available
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV98AV BUV98AV

    BUV98AV

    Abstract: s 0938
    Text: BUV98AV NPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE • ■ ■ ■ ■ INDUSTRIAL APPLICATIONS


    Original     		PDF BUV98AV BUV98AV s 0938

    schematic diagram UPS

    Abstract: BUV98AV RC VOLTAGE CLAMP snubber circuit
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV98AV schematic diagram UPS BUV98AV RC VOLTAGE CLAMP snubber circuit

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    BUV98AF

    Abstract: TRANSISTOR BUV98AF BUV98AV Scans-007954 SC04B
    Text: 3DE ]> • TTS'ìSB? - D D 3 Q4 Q 5 S G S- TH OM SON SGS-THOMSON — „ — p [MDœmi gTrifMD § I '33-15 1 - BUV98AF BUV98AV NPN TR A N S IS TO R PO W ER MODULE . HIGH CURRENT POWER BIPOLAR MODULE


    OCR Scan     		PDF BUV98AF BUV98AV sc04b30 T-91-20 O-240) BUV98AF TRANSISTOR BUV98AF BUV98AV Scans-007954 SC04B

    BUV98

    Abstract: 98AV BUV98AV
    Text: X = 7 S G S -T H O M S O N i § * i m [ l 1i » « S BUV98AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV98AV BUV98 98AV BUV98AV

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl DQSflSDB MbB BUV98 V BUV98A(V) b^E » SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.


    OCR Scan     		PDF BUV98 BUV98A BUV98IV) 150stive 0G2A50?

    BUV98

    Abstract: BUV98A ATT25 BUV98AV BUV98V
    Text: PHI L IP S I N T E R N A T I O N A L 4SE D El 711002b 0031127 O E2PHIN BUV98 V BUV98A(V) T-33-/3 SILIC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-current, high-speed transistors, assembled in the isolated ISO T O P package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.


    OCR Scan     		PDF 711002t, BUV98 BUV98A T-33-/3 OT227B BUV98V BUV98AV) 98AIV) 7ZB19IS ATT25 BUV98AV

    BUV98

    Abstract: BUV98A BUV98AV BUV98V sot227a
    Text: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.


    OCR Scan     		PDF ABUV98 BUV98A BUV98IV) OT227B BUV98V BUV98 BUV98AV sot227a

    BUV98A

    Abstract: BUV98 BUV98AV BUV98V
    Text: II N AMER PHILIPS/DISCRETE bTE J> • bbSB'iBl DQ2flSD3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in th e isolated ISOTOP package; intended fo r use in inverters, converters and m o to r c o n tro l applications on 220 V to 38 0 V m ains supplies.


    OCR Scan     		PDF BUV98 BUV98A BUV98IV) OT227B BUV98V BUV98A BUV98AV

    buv98a

    Abstract: buv98
    Text: PHILIPS INTERNATIONAL M5E » Bi 711002b 0031127 G E3PHIN BU V98 V BUV98A(V) T-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.


    OCR Scan     		PDF 711002b BUV98A T-33-13 OT227B BUV98V V98AV) BUV98

    BUV98AV

    Abstract: No abstract text available
    Text: r= 7 ^ 7# SGS-THOMSON R m o ra « BUV98AV NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF BUV98AV

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF