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Philips Semiconductors BUW133A 15 A, 500 V, SI NPN POWER BJT, SOT-93
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Quest Components	BUW133A		51			1 $22.5 10 $20 100 $18.5 1000 $18.5 10000 $18.5	Buy Now

BUW133 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUW133		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUW133		Philips Semiconductors	High Speed, High Voltage Transistors		Scan	PDF
BUW133		Philips Semiconductors	NPN Silicon Power Transistors		Scan	PDF
BUW133A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUW133A		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BUW133A		Philips Semiconductors	High Speed, High Voltage Transistors		Scan	PDF
BUW133A		Philips Semiconductors	NPN Silicon Power Transistors		Scan	PDF
BUW133H		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUW133H		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BUW133H		Philips Semiconductors	High Speed, High Voltage Transistors		Scan	PDF
BUW133H		Philips Semiconductors	NPN Silicon Power Transistors		Scan	PDF

BUW133 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUW133 Abstract: BUW133A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW133/A DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in	Original	BUW133/A -BUW133 -BUW133A BUW133 BUW133A BUW133 BUW133A	PDF
BUW133H Abstract: NPN Transistor 450v 1A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.	Original	BUW133H BUW133H NPN Transistor 450v 1A	PDF
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General	Original		PDF
LT062 Abstract: mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Min (Hz) r ICBO Max (A) Max (s) (CE)««t Max (Ohms) Toper Max (°C) Package Style Devic s 20 Watts or More, (Cont'd) . . . .5 . . . -10 . .15 .	Original	BT059RS BT059S 2SC2429A BU932P BUS13A BUW13AF BUX48APL BUX48A MJ12022 LT062 mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409	PDF
STRS6307 Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173	Original	2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020	PDF
Untitled Abstract: No abstract text available Text: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast	OCR Scan	bS3T31 BUW133 -33-j3 BUW133H BUW133	PDF
tsv 518 Abstract: BUW133 BUW133A BUW133H 133h Text: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast	OCR Scan	BUW133 T-33-13 BUW133H 7Z21439 tsv 518 BUW133A 133h	PDF
con10a Abstract: BUW133A BUW133 BUW133H 10 N j 400 V tsv 518 Text: 001^037 DEVELOPMENT DATA fl • BUW133 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E 25E . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors In SOT93 envelope, intended for use In very fast	OCR Scan	BUW133 T-33-J3 BUW133H T-33-13 7Z21438 bfcj5313 con10a BUW133A 10 N j 400 V tsv 518	PDF
buw13a philips semiconductor Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A	OCR Scan	S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
buw13a philips semiconductor Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V	OCR Scan	bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF