BUW133H Search Results

BUW133H Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUW133H		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUW133H		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BUW133H		Philips Semiconductors	High Speed, High Voltage Transistors		Scan	PDF
BUW133H		Philips Semiconductors	NPN Silicon Power Transistors		Scan	PDF

BUW133H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUW133H Abstract: NPN Transistor 450v 1A Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.	Original	BUW133H BUW133H NPN Transistor 450v 1A	PDF
LT062 Abstract: mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Min (Hz) r ICBO Max (A) Max (s) (CE)««t Max (Ohms) Toper Max (°C) Package Style Devic s 20 Watts or More, (Cont'd) . . . .5 . . . -10 . .15 .	Original	BT059RS BT059S 2SC2429A BU932P BUS13A BUW13AF BUX48APL BUX48A MJ12022 LT062 mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409	PDF
STRS6307 Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173	Original	2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020	PDF
Untitled Abstract: No abstract text available Text: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast	OCR Scan	bS3T31 BUW133 -33-j3 BUW133H BUW133	PDF
buw13a philips semiconductor Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A	OCR Scan	S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF	PDF
tsv 518 Abstract: BUW133 BUW133A BUW133H 133h Text: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast	OCR Scan	BUW133 T-33-13 BUW133H 7Z21439 tsv 518 BUW133A 133h	PDF
con10a Abstract: BUW133A BUW133 BUW133H 10 N j 400 V tsv 518 Text: 001^037 DEVELOPMENT DATA fl • BUW133 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E 25E . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors In SOT93 envelope, intended for use In very fast	OCR Scan	BUW133 T-33-J3 BUW133H T-33-13 7Z21438 bfcj5313 con10a BUW133A 10 N j 400 V tsv 518	PDF
buw13a philips semiconductor Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V	OCR Scan	bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF