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    BUZ10 Search Results

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    BUZ10 Price and Stock

    STMicroelectronics BUZ10

    MOSFET N-CH 50V 23A TO220AB
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    DigiKey BUZ10 Tube 2,000
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    Bristol Electronics BUZ10 35
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    Vyrian BUZ10 89
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    Rochester Electronics LLC BUZ101L

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ101L Bulk 1,039
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    Rochester Electronics LLC BUZ100S

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ100S Bulk 547
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    Rochester Electronics LLC BUZ100S-E3045A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ100S-E3045A Bulk 547
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    Siemens BUZ102

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    Bristol Electronics BUZ102 300
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    Find more BUZ10 price and stock on Findchips.com

    BUZ10 Datasheets (195)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ10 Infineon Technologies Transistor Mosfet N-CH 50V 23A 3TO-220AB Original PDF
    BUZ10 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ10 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    BUZ10 STMicroelectronics N - Channel 50 V - 0.06 ohm - 23 A TO-220 STripFET MOSFET Original PDF
    BUZ10 STMicroelectronics N-CHANNEL 50V - 0.06 Ohm - 23A -TO-220 STripFET POWER MOSFET Original PDF
    BUZ10 STMicroelectronics N-Channel 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET Original PDF
    BUZ10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ10 Motorola European Master Selection Guide 1986 Scan PDF
    BUZ10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ10 Unknown FET Data Book Scan PDF
    BUZ10 Semelab MOS Power Transistor Scan PDF
    BUZ10 Siemens Power Transistors Scan PDF
    BUZ10 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ100 Siemens Original PDF
    BUZ100 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) Original PDF
    BUZ100 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    BUZ10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ10 100oC 175oC O-220 BUZ10 PDF

    buz10

    Abstract: No abstract text available
    Text: BUZ10  N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET T YPE BUZ 10 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ10 O-220 175oC O-220 buz10 PDF

    BUZ10

    Abstract: buz10 MOROCCO
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO PDF

    buz10 MOROCCO

    Abstract: BUZ10 morocco buz10
    Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ10 O-220 175oC buz10 MOROCCO BUZ10 morocco buz10 PDF

    BUZ10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET MOSFET TYPE BUZ10 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		BUZ10 O-220 175oC BUZ10 PDF

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


    OCR Scan     		102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ PDF

    BUZ10

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10 PDF

    smd diode code b54

    Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
    Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current


    OCR Scan     		BUZ101S P-T0220-3-1 Q67040-S4013-A2 E3045A P-T0263-3-2 Q67040-S4013-A6 E3045 smd diode code b54 smd transistor c015 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA PDF

    GD 743 Siemens

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on


    OCR Scan     		TQ-220 BUZ103AL C67078-S1357-A2 A23SbOS Z103AL O-220 T05155 235b05 D0fl45flfl GD 743 Siemens PDF

    BUZ100

    Abstract: No abstract text available
    Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A


    OCR Scan     		O-220 BUZ100L C67078-S1354-A2 BUZ100 PDF

    buz102

    Abstract: No abstract text available
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on


    OCR Scan     		O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102 PDF

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V PDF

    buz10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL 50V - 0.06ft - 23A -TO-220 STripFET POWER MOSFET TYP E BUZ10 • . . . . V R d S o ii Id < 0.07 Q. 23 A dss 50 V TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE


    OCR Scan     		BUZ10 -TO-220 O-220 buz10 PDF

    Untitled

    Abstract: No abstract text available
    Text: I TTETEB? O OS^ b M b 5 • SGS-THOMSON BUZ10A D g^ iL[l(g^^©iO©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S 6 TYPE BUZ10A S - TH OM SO N V qss 50 V ^D S(on 0.12 Î2 3QE » Id 17 A • HIGH SPEED SWITCHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE


    OCR Scan     		BUZ10A PDF

    BUZ10A

    Abstract: automatic motor for reverse and forward guided vehicle 30C17
    Text: 7=52=1237 w # Q02^b4b 2 S G S -T H O M S O N k 7 # BUZ10A [M lD { g ^ Q iL [l ïï^ © lD (g i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S- TH OMSO N 30E TYPE V qss ^ ds (on) Id B U Z 10 A 50 V 0 .1 2 Î2 17 A 3> • H IG H S P E E D S W IT C H IN G


    OCR Scan     		BUZ10A BUZ10A automatic motor for reverse and forward guided vehicle 30C17 PDF

    7C SMD TRANSISTOR

    Abstract: No abstract text available
    Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A


    OCR Scan     		O-220 BUZ101 C67078-S1350-A2 7C SMD TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on


    OCR Scan     		O-220 BUZ104L 78-S1358-A2 0235bG5 0064bD4 G0fl4b05 0235bOS PDF

    z10a

    Abstract: BUZ10A GR5d
    Text: / = 7 SGS-THOMSON * 7 # MÖ g»(l[L(l(g¥»R5D(gi B U Z10A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ10A 50 V 0.12 n 17 A • HIGH SPEED SWITCHING • LOW R ds (ON) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:


    OCR Scan     		BUZ10A z10a BUZ10A GR5d PDF

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


    OCR Scan     		BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203 PDF

    BUZ100

    Abstract: BSS10
    Text: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston


    OCR Scan     		O-220 BUZ100L C67078-S1354-A2 T05155 BUZ100 BSS10 PDF

    TRANSISTOR SMD MARKING CODE B7t

    Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
    Text: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated


    OCR Scan     		BUZ104S BU2104S P-T0220-3-1 Q67040-S4007-A2 BUZ104S E3045A P-T0263-3-2 Q67040-S4007-A6 E3045 TRANSISTOR SMD MARKING CODE B7t transistor marking b7t transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t smd transistor marking JR marking b7t D1337 PDF

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 PDF

    ds3847

    Abstract: BUZ-10L BUZ10L 221A-04 AN569 MTP23N05L
    Text: BUZ10L MTP23N05L Pow er Field Effect T ran sistor N -C h an n el E n h an ce m e n t-M o d e S ilic o n G ate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, motor controls, solenoid and relay


    OCR Scan     		BUZ10L MTP23N05L 21A-04 O-220AB 50tching BUZ10L C6554S ds3847 BUZ-10L 221A-04 AN569 MTP23N05L PDF

    smd transistor 43t

    Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
    Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018


    OCR Scan     		BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333 PDF