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Siemens BUZ83A
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Bristol Electronics	BUZ83A		146			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUZ83 Datasheets (14)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUZ83		Philips Semiconductors	PowerMOS Transistor		Original	PDF
BUZ83		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
BUZ83		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUZ83		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
BUZ83		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
BUZ83		Siemens	main ratings		Scan	PDF
BUZ83		Siemens	Power Transistors		Scan	PDF
BUZ83A		Philips Semiconductors	PowerMOS Transistor		Original	PDF
BUZ83(A)		Unknown	Metal oxide N-channel FET, Enhancement Type		Scan	PDF
BUZ83A		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
BUZ83A		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
BUZ83A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUZ83A		Siemens	main ratings		Scan	PDF
BUZ83A		Siemens	Power Transistors		Scan	PDF

BUZ83 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ83A CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	O-204AA BUZ83A	PDF
BUZ901P Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410 Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0	Original	BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410	PDF
SIEMENS 800 Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C\|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80	Original	O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D • PowerMOS transistor ODlHbflT 4 ■ BUZ83A T-Z°l-1 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ83A T-39-11 DD14fc bbS3T31	PDF
BUZ83A Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	BUZ83A 7Z8388S bbS3T31 T-S9-11 BUZ83A	PDF
Untitled Abstract: No abstract text available Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ83 ObE D • bb 53131 OOlMbfia 1 ■ r - 3 9 -!/ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ83 T-39-11 BUZ83_ bb53T31 bb53131	PDF
Untitled Abstract: No abstract text available Text: aûD » • aa35bQ5 o o m a i o 88 D 14810 « sieù D . BUZ83A SIEMENS AKTIENfiESELLSCHAF-Main ratings N-Channel Draln-source voltage Vos Continuous drain current Io Draln-source on-reslstance ^DS on 800 V 3,4 A 3,0 n Description SIPMOS, N-channel, enhancement mode	OCR Scan	aa35bQ5 BUZ83A C67078-A1012-A3 a53Sb0S 1487s	PDF
SF 369 Abstract: TRANSISTOR C 369 TB531 t03 package transistor pin dimensions BUZ83 K 3911 Text: PowerMOS transistor N AUER P H IL IP S /D IS C R ET E BUZ83 OLE D • OOlMbfiE 1 ■ T - 2 1 - 1 1 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effeci power transistor in a metal envetope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ83 tb53131 7Z8388S T-39-11 hbS3T31 SF 369 TRANSISTOR C 369 TB531 t03 package transistor pin dimensions BUZ83 K 3911	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
A1306 TRANSISTOR Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)	OCR Scan	O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan		PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF