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    C30659 Price and Stock

    Excelitas Technologies Corporation C30659-1550E-R08BH

    SENSOR PHOTODIODE 1550NM TO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30659-1550E-R08BH Bulk 20 1
    • 1 $998.56
    • 10 $848.401
    • 100 $848.401
    • 1000 $848.401
    • 10000 $848.401
    		Buy Now

    Excelitas Technologies Corporation C30659-900-R8AH

    SENSOR PHOTODIODE 900NM TO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30659-900-R8AH Bulk 8 1
    • 1 $1091.88
    • 10 $1091.88
    • 100 $1091.88
    • 1000 $1091.88
    • 10000 $1091.88
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    Excelitas Technologies Corporation C30659-1060E-R8BH

    SENSOR PHOTODIODE 1064NM TO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30659-1060E-R8BH Bulk 8 1
    • 1 $1189.75
    • 10 $1189.75
    • 100 $1189.75
    • 1000 $1189.75
    • 10000 $1189.75
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    Excelitas Technologies Corporation C30659-1550-R08BH

    SENSOR PHOTODIODE 1550NM TO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30659-1550-R08BH Box 5 1
    • 1 $965.12
    • 10 $965.12
    • 100 $965.12
    • 1000 $965.12
    • 10000 $965.12
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    Excelitas Technologies Corporation C30659-1550-R2AH

    SENSOR PHOTODIODE 1550NM TO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30659-1550-R2AH Box 2 1
    • 1 $1144.75
    • 10 $1144.75
    • 100 $1144.75
    • 1000 $1144.75
    • 10000 $1144.75
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    Find more C30659 price and stock on Findchips.com

    C30659 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30659 PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-1060-3A PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-1060-3AH Excelitas Technologies SI APD + AMP, TO-8, 50 MHZ Original PDF
    C30659-1060E-R8BH Excelitas Technologies SI APD + AMP, TO-8, 200MHZ, HIGH Original PDF
    C30659-1060-R8B PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-1550E-R08BH Excelitas Technologies INGAAS APD + AMP, TO-8, 200MHZ, Original PDF
    C30659-1550E-R2AH Excelitas Technologies INGAAS APD + AMP, TO-8, 50MHZ, H Original PDF
    C30659-1550-R08B PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-1550-R08BH Excelitas Technologies INGAAS APD RECEIVER, 80UM, TO-8, Original PDF
    C30659-1550-R2A PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-1550-R2AH Excelitas Technologies INGAAS APD RECEIVER, 200UM, TO-8 Original PDF
    C30659-900-R5B PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-900-R5BH Excelitas Technologies SI APD + AMP, TO-8, 200MHZ Original PDF
    C30659-900-R8A PerkinElmer Optoelectronics Silicon and InGaAs APD Preamplifier Modules Original PDF
    C30659-900-R8AH Excelitas Technologies SI APD + AMP, TO-8, 50MHZ Original PDF

    C30659 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30659-UV-1 UV APD Preamplifier Module Key Features • 50 MHz system bandwidth  Ultra low noise equivalent power NEP  Blue enhanced spectral response range  Power consumption: 150 mW typ  ±5 V amplifier operating voltages


    Original     		C30659-UV-1 C30950 C30659 C30659-UV-1-Rev PDF

    C30817E

    Abstract: No abstract text available
    Text: C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E PDF

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier PDF

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		900/1060/1550/1550E LLAM-1550E 12-lead PDF

    C30817

    Abstract: No abstract text available
    Text: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the


    Original     		C30659 C30659-1550-R2AH C30645 C30919E C30817 C30950EH LLAM-1550-R2AH C30662 LLAM-1060-R8BH C30817 PDF

    APD 1550 nm photodetector

    Abstract: C30950EH HUV-1100
    Text: ModuleS฀and฀optical฀receiverS฀ PIN AND APD Si PIN and APD Modules, InGaAs APD Modules RECEIVER MODULES FOR ANALYTICAL AND INDUSTRIAL APPLICATIONS Si PIN and APD Modules – InGaAs APD Modules applications • Laser range inder product฀description


    Original     		C30659 C30659-1550-R08BH C30645 C30659-1550-R2AH C30919E C30817 C30950EH LLAM-1550-R2AH APD 1550 nm photodetector C30950EH HUV-1100 PDF

    C30955EH

    Abstract: No abstract text available
    Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these


    Original     		C30954EH, C30955EH C30956EH C30955EH, C30956EH C30954EH DTS0308 PDF

    C30955EH

    Abstract: No abstract text available
    Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been


    Original     		C30954EH, C30955EH, C30956EH C30954EH C30956EH. DTS0308 C30955EH PDF