C30955EH
Abstract: No abstract text available
Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these
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C30954EH,
C30955EH
C30956EH
C30955EH,
C30956EH
C30954EH
DTS0308
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C30955EH
Abstract: No abstract text available
Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been
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C30954EH,
C30955EH,
C30956EH
C30954EH
C30956EH.
DTS0308
C30955EH
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C30817E
Abstract: datasheet apd 1550
Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,
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C30659
12-lead
C30817EH,
C30902EH,
C30954EH,
C30956EH,
C30645EH
C30662EH,
C30950
C30817E
datasheet apd 1550
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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PerkinElmer tr 1700
Abstract: PerkinElmer Avalanche Photodiode
Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche
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12-lead
DTS0108P
PerkinElmer tr 1700
PerkinElmer Avalanche Photodiode
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30817com.
diode d1n914
d1n914 DIODE
d1n914
C30817E
C30659-1550-R2A
InGaas PIN photodiode, 1550 NEP
C30950
Silicon and InGaAs APD Preamplifier Modules
C30954E
avalanche photodiode 1550nm sensitivity
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C30902S
Abstract: C30817E C30817 C30955EH
Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager
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C30902EH,
C30921EH
C30902SH,
C30921SH
C30902S
C30817E
C30817
C30955EH
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C30817E
Abstract: C30955EH
Text: PhotodiodeSForhiGh-PerFormAnceAPPlicAtionS Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Productdescription hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and
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C30902
C30902EH,
C30921EH
C30902SH,
C30921SH
C30817E
C30955EH
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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900/1060/1550/1550E
LLAM-1550E
12-lead
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C30817E
Abstract: No abstract text available
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30om.
C30817E
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C30817E
Abstract: SILICON APD Pre-Amplifier
Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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C30659
900/1060/1550/1550E
-1550E
C30817EH,
C30902EH,
C30954EH
C30956EH
C30645EH
C30662EH
C30817E
SILICON APD Pre-Amplifier
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C30817
Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications
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ISO-9001-87
C30954E,
C30955E,
C30956E
C30954E
C30955E
C30956E
C30817
ISO-9001-87
C30872
C30916E
c30954
C30956
c30955e
avalanche photodiodes
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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