C30956E Search Results

C30956E Price and Stock

Filter by Manufacturer


Excelitas Technologies Corporation C30956EH SENSOR PHOTODIODE 900NM TO8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C30956EH	Box			10	1 - 10 $917.875 100 $917.875 1000 $917.875 10000 $917.875	Buy Now

C30956E Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
C30956E		Unknown	(C30954E - C30956E) Photodiode		Scan	PDF
C30956E		RCA Solid State	Photodiodes		Scan	PDF
C30956EH		Excelitas Technologies	SI APD3MM, TO-8, 1064NM ENHANCED		Original	PDF

C30956E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C30955EH Abstract: No abstract text available Text: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these	Original	C30954EH, C30955EH C30956EH C30955EH, C30956EH C30954EH DTS0308	PDF
C30955EH Abstract: No abstract text available Text: Overview Features and Benefits The PerkinElmer C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes such that their long wave response i.e. > 900 nm has been	Original	C30954EH, C30955EH, C30956EH C30954EH C30956EH. DTS0308 C30955EH	PDF
C30817E Abstract: datasheet apd 1550 Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,	Original	C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E	PDF
diode d1n914 Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP	Original	C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity	PDF
C30902S Abstract: C30817E C30817 C30955EH Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager	Original	C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH	PDF
C30817E Abstract: C30955EH Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and	Original	C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH	PDF
C30817E Abstract: No abstract text available Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP	Original	C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E	PDF
C30817E Abstract: SILICON APD Pre-Amplifier Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.	Original	C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier	PDF
C30817 Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications	OCR Scan	ISO-9001-87 C30954E, C30955E, C30956E C30954E C30955E C30956E C30817 ISO-9001-87 C30872 C30916E c30954 C30956 c30955e avalanche photodiodes	PDF
C30817 Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916 Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —	OCR Scan	3030bl0 C30954E, C30955E, C30956E C30954E C30955E Range--40Â C30817 s915 C30872 C30955E tic 1060 C30956E s914 C30916E 92LS-S916	PDF
Untitled Abstract: No abstract text available Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —	OCR Scan	3030bl0 C30954E, C30955E, C30956E C30956E	PDF