Untitled
Abstract: No abstract text available
Text: Mounting Inserts M3*0.5 Through 4pl. E R I E Typical Derating Curve for CEB75-48S3V3 4 INPUT SPECIFICATIONS: 5 20 Input Voltage – 75V6 1.40 3 35.56 Under voltage lockout …….….
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CEB75-48S3V3
12Vout.
CEB75-48S1V8
CEB75-48S12
1902mA
CEB75
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PDF
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Untitled
Abstract: No abstract text available
Text: CEB75 SERIES 62 TO 84 WATT 1/8 BRICK DC-DC CONVERTERS FEATURES * 62 - 84W Isolated Output * Eighth Brick Package * Regulated Outputs * Efficiency up to 92% * 1500VDC Isolation * Input Under Voltage Protection * Over Current Protection * Over Temperature Protection
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CEB75
1500VDC
UL60950-1
CEB75-48S2V5
1463mA
CEB75-48S3V3
1528mA
CEB75-48S05
1736mA
CEB75-48S12
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 DC DC Part Num CEB75 SERIES 30-84 WATT 1/8 BRICK DC-DC CONVERTERS Features: • 30-84W Isolated Output • Eighth Brick Package • Regulated Outputs • Ef ciency to 92% • 1500VDC Isolation • Input Under Voltage Protection • Over Current Protection
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CEB75
0-84W
1500VDC
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CEP75N06
Abstract: CEB75N06 260uH
Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP75N06/CEB75N06
O-220
O-263
CEP75N06
CEB75N06
260uH
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PDF
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CEP75N06
Abstract: 4V12 CEB75N06
Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP75N06/CEB75N06
O-220
O-263
CEP75N06
4V12
CEB75N06
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PDF
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S3310
Abstract: CEP75N10 S 3310
Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP75N10/CEB75N10
O-220
O-263
S3310
CEP75N10
S 3310
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CEP75A3
Abstract: No abstract text available
Text: CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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Original
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CEP75A3/CEB75A3
O-263
O-220
O-263
O-220
CEP75A3
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5V200
Abstract: No abstract text available
Text: RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ■ ■ CEB75 ELECTRONIC COMPONENTS S E Mounting Inserts M3*0.5 Through 4pl. Änderungen vorbehalten / subject to change without notice
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Original
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D-63069
CEB75
CEB75-48S3V3
24ircuit
CEB75-48S1V8
CEB75-48S12
1902mA
5V200
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PDF
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