CEP75N06
Abstract: CEB75N06 260uH
Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP75N06/CEB75N06
O-220
O-263
CEP75N06
CEB75N06
260uH
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CEP75N06
Abstract: 4V12 CEB75N06
Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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Original
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PDF
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CEP75N06/CEB75N06
O-220
O-263
CEP75N06
4V12
CEB75N06
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