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    CGH27030F Search Results

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    CGH27030F Price and Stock

    MACOM CGH27030F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27030F Tray 41 1
    • 1 $150.43
    • 10 $123.892
    • 100 $150.43
    • 1000 $150.43
    • 10000 $150.43
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    Mouser Electronics CGH27030F 85
    • 1 $144.97
    • 10 $134.28
    • 100 $125.38
    • 1000 $125.38
    • 10000 $125.38
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    Richardson RFPD CGH27030F 100
    • 1 -
    • 10 -
    • 100 $116.4
    • 1000 $116.4
    • 10000 $116.4
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    MACOM CGH27030F-AMP

    AMPLIFIER, 2.3-2.7GHZ, CGH27030F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27030F-AMP Bulk 1
    • 1 $750.8
    • 10 $750.8
    • 100 $750.8
    • 1000 $750.8
    • 10000 $750.8
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    Richardson RFPD CGH27030F-AMP 1
    • 1 -
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    CGH27030F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH27030F Cree 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Original PDF

    CGH27030F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PAR ofdm

    Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
    Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH27030F CGH27030F CGH2703 PAR ofdm CGH27030 CGH27030-TB RO4350B 10UF 470PF str f 3626

    transistor 17556

    Abstract: 17556 transistor TC 9147 10UF 470PF CGH27030F CGH27030-TB transistor 9047
    Text: PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH27030F CGH27030F CGH2703 transistor 17556 17556 transistor TC 9147 10UF 470PF CGH27030-TB transistor 9047

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX

    Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf
    Text: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2703 27030F CGH27030F

    on 5295 transistor

    Abstract: CGH27030 CGH27030F CGH27030-TB CGH40025F JESD22
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2703 27030F CGH27030F on 5295 transistor CGH27030-TB CGH40025F JESD22

    on 5295 transistor

    Abstract: CGH27030 CGH27030F CGH27030-TB JESD22 CGH27030 s 27015F
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2701 27015F CGH27030F on 5295 transistor CGH27030-TB JESD22 CGH27030 s 27015F

    440166

    Abstract: CGH27030 s str 6808 transistor j326 CGH27030f 3-500z
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2703 27030F CGH27030F 440166 CGH27030 s str 6808 transistor j326 3-500z

    CGH27030

    Abstract: 3-500z
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2703 27030F CGH27030F 3-500z