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Contextual Info: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Subminiature and Microminiature D Connectors Stacked Connectors AMP 1-440166-1 Active Active Not Reviewed for ELV/RoHS Compliance Tyco Electronics P/N: 1-440166-1

str w 6554 a

Abstract: STR 6554 a
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band

Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

ATC600S

Abstract: AVX0805 AVX1206 CRF35010
Contextual Info: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has

Cree Microwave

Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

CGH27015

Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,

STR F 6168

Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high

CGH09120F

Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR

RO4350

Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
Contextual Info: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/

PAR ofdm

Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
Contextual Info: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: - 39.00i0.15-33.32 ±0.1 524.8 + 0.15 -6.00 + 0 .2 5 $ 4 —40 UNC 2 PLC -AMP LOGO ^ 0 .2 5 + 0 .2 1 —3.80 + 0.41 2 PLC CROPHONE AUDIO OUT 3.1 8 + 0.38—1 3.1 8 + 0.38 ^ 20 PLC 15 PLC 1 .1 7 + 0.03 15 PLC 03.2O+OJO PCB TOLERANCE: 0 - 12: ± 0.10 12- : ±0.15

Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high

CGH55030

Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
Contextual Info: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal

10UF

Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

str w 6554 a

Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
Contextual Info: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain

CGH27015-TB

Abstract: CGH27015 CGH27015F JESD22
Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,

CGH5503

Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
Contextual Info: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1

CGH55015F2

Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
Contextual Info: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/

STR W 5753 a

Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

transistor 8772

Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied