LT89

Abstract: ltbyf LMK3168BJ106ML lcd monitor input 5v and output 12v 35v -5.5v LT1930 Schottky Diode 40V 5A A916CY-2R7M A916CY-3R3M LT3489 LT3489EMS8E
Contextual Info: LT3489 2MHz Boost DC/DC Converter with 2.5A Switch and Soft-Start DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 3489 is a fixed frequency step-up DC/DC converter containing an internal 2.5A, 40V switch. The LT3489 is ideal for large TFT-LCD panel power supplies. The LT3489

PM5357-BI

Abstract: cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5357 S/UNI-622-POS REFERENCE DESIGN PMC-1981070 ISSUE 2 S/UNI-622-POS REFERENCE DESIGN PM5357 S/UNI-622-POS SATURN USER NETWORK INTERFACE 622-POS REFERENCE DESIGN PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2000

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC2114R2 Rev. 3, 7/2005 Will be replaced by MHVIC2114NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated

Bourns 3296

Abstract: 3 pin 3296 Variable Resistor bourns 3296 variable resistor 3296 Variable Resistor bourns 3296 potentiometer BLM11A601S 3 pin 3296 Variable Resistor pin configuration
Contextual Info: 19-4755; Rev 0; 12/97 MAX3766 Evaluation Kit The MAX3766 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy optical or electrical evaluation of the MAX3766 622Mbps laser driver. Ordering Information PART TEMP. RANGE

ATC600S

Abstract: AVX0805 AVX1206 CRF35010
Contextual Info: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

BOURNS 3296

Abstract: bourns 3296 variable resistor 3 pin 3296 Variable Resistor 3296 Variable Resistor 50KC1 BLM11A601S MAX3766 MAX3766EEP MAX3766EVKIT MAX809M
Contextual Info: 19-4755; Rev 0; 12/97 MAX3766 Evaluation Kit The MAX3766 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy optical or electrical evaluation of the MAX3766 622Mbps laser driver. Ordering Information PART TEMP. RANGE

atc600s

Abstract: CRF35010-101 CRF-35010 AVX1206
Contextual Info: CRF-35010-101 10 W, 3400-3800 MHz, SiC RF Power MESFET PRELIMINARY Features • • • • • • • • • Package Type 440101 Application 3.4 - 3.8 GHz Operation 10 dB Small Signal Gain -40 dBc OFDM at 1.5 W 17% Drain Efficiency at 1.5 W 10 W P1dB Internally Matched

A113

Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station

smps PCB LAYOUT

Abstract: MPC5674 IRF7521 IR735 MPC5674F RLF7030T-2R2M5R4 08053C225KAT2A AN3898 DO3316T-222MLB AVX-08053C225KAT2A
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3898 Rev. 1, 07/2009 PCB Layout Guidelines for MPC5674x Switch Mode Power Supply SMPS by: Bill Terry, Allan Dobbin, and Stefano Pietri 32-bit Automotive Applications Engineering Microcontroller Solutions Group

A113

Abstract: A114 A115 AVX08051J6R8BBT C101 JESD22 MHVIC2114NR2 TAJA105K035R AVX0805
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 4, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

Contextual Info: TQP3M6004 Datasheet Low Band Dual LNA 700-915 MHz Features Functional Block Diagram RFinA VgateA RFoutA VdrainA A B RFinB VgateB RFoutB VdrainB Groundand andsource Ground Source A, Source B connections may be connections through through the paddle orpackage

Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated

AN1955

Abstract: A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Contextual Info: MOTOROLA Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

ATC1206

Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

smps PCB LAYOUT

Abstract: IRF7521 MPC567xF MPC5674 MPC5674F DO3316T-222MLB RLF7030T-2R2M5R4 IR7353
Contextual Info: Document Number: AN3898 Rev. 1, 07/2009 PCB Layout Guidelines for MPC5674x Switch Mode Power Supply SMPS by: Bill Terry, Allan Dobbin, and Stefano Pietri 32-bit Automotive Applications Engineering Microcontroller Solutions Group 1 Overview Switched regulators have become popular for their

220UF 16V

Abstract: VP1-0059 AVX08055 AVX08055C103MAT2A B260A MIC4680BM TPSE227016R0100
Contextual Info: Application Hint 37d Micrel Application Hint 37d ±12V/125mA Split Power Supply by Jeff Dixon Circuit Performance • Simple solution for dual output • Off-the-shelf magnetics +11.2V to +15V C1 15µF 20V U1 MIC4680BM IN SW 2 OFF 1 SHDN FB T1 3:3 3 4 D1 +12V/125mA

TQP3M6004

Abstract: Tower Mounted Amplifiers Schematic Tower Mounted Amplifiers 700 MHZ Tower Mounted Amplifiers Tower Mounted Amplifiers Dual Band M6004 marking L5 AVX-L0805220JESTR Low Noise Amplifiers lna 850 MHz RF 207
Contextual Info: TQP3M6004 Datasheet Low Band Dual LNA 700-915 MHz Features Functional Block Diagram RFinA VgateA RFoutA VdrainA A B RFinB VgateB RFoutB VdrainB Groundand andsource Ground Source A, Source B connections may be connections through through the paddle orpackage

Contextual Info: Document Number: MHVIC2114R2 Rev. 4, 8/2006 Freescale Semiconductor Technical Data Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC2114R2 The MHVIC2114R2 wideband integrated circuit is designed for base station

MCR35V

Contextual Info: Freescale Semiconductor Technical Data MHVIC2114R2 Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP−16 package has had lead−free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated

Z1C22

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 4, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher