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    Kyocera AVX Components AVX08055G104ZAT2A

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    Bristol Electronics AVX08055G104ZAT2A 11,550
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    Kyocera AVX Components AVX08051A180JAT2A

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    Bristol Electronics AVX08051A180JAT2A 7,125
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    Kyocera AVX Components AVX08055C123KAT2A

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    Bristol Electronics AVX08055C123KAT2A 4,120
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    Kyocera AVX Components AVX08051C102KAT2A

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    Bristol Electronics AVX08051C102KAT2A 4,000
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    Kyocera AVX Components AVX0805YG105ZAT2A

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    Bristol Electronics AVX0805YG105ZAT2A 2,952
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    AVX0805 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT89

    Abstract: ltbyf LMK3168BJ106ML lcd monitor input 5v and output 12v 35v -5.5v LT1930 Schottky Diode 40V 5A A916CY-2R7M A916CY-3R3M LT3489 LT3489EMS8E
    Text: LT3489 2MHz Boost DC/DC Converter with 2.5A Switch and Soft-Start DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 3489 is a fixed frequency step-up DC/DC converter containing an internal 2.5A, 40V switch. The LT3489 is ideal for large TFT-LCD panel power supplies. The LT3489


    Original     		PDF LT3489 LT3489 LT3477 TSSOP-20E LT3479 TSSOP-16E 3489f LT89 ltbyf LMK3168BJ106ML lcd monitor input 5v and output 12v 35v -5.5v LT1930 Schottky Diode 40V 5A A916CY-2R7M A916CY-3R3M LT3489EMS8E

    PM5357-BI

    Abstract: cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P
    Text: PMC-Sierra, Inc. PRELIMINARY PM5357 S/UNI-622-POS REFERENCE DESIGN PMC-1981070 ISSUE 2 S/UNI-622-POS REFERENCE DESIGN PM5357 S/UNI-622-POS SATURN USER NETWORK INTERFACE 622-POS REFERENCE DESIGN PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2000


    Original     		PDF PMC-1981070 PM5357 S/UNI-622-POS S/UNI-622-POS PM5357 622-POS) PM5357-BI cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC2114R2 Rev. 3, 7/2005 Will be replaced by MHVIC2114NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated


    Original     		PDF MHVIC2114NR2 PFP-16 MHVIC2114R2 MHVIC2114R2

    Bourns 3296

    Abstract: 3 pin 3296 Variable Resistor bourns 3296 variable resistor 3296 Variable Resistor bourns 3296 potentiometer BLM11A601S 3 pin 3296 Variable Resistor pin configuration
    Text: 19-4755; Rev 0; 12/97 MAX3766 Evaluation Kit The MAX3766 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy optical or electrical evaluation of the MAX3766 622Mbps laser driver. Ordering Information PART TEMP. RANGE


    Original     		PDF MAX3766 622Mbps MAX809M MAX3766 MAX3766EVKIT MAX3766EEP Bourns 3296 3 pin 3296 Variable Resistor bourns 3296 variable resistor 3296 Variable Resistor bourns 3296 potentiometer BLM11A601S 3 pin 3296 Variable Resistor pin configuration

    ATC600S

    Abstract: AVX0805 AVX1206 CRF35010
    Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has


    Original     		PDF CRF35010F CRF35010 CRF350 CRF35010F ATC600S AVX0805 AVX1206

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original     		PDF MHVIC2114NR2 MHVIC2114NR2

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    BOURNS 3296

    Abstract: bourns 3296 variable resistor 3 pin 3296 Variable Resistor 3296 Variable Resistor 50KC1 BLM11A601S MAX3766 MAX3766EEP MAX3766EVKIT MAX809M
    Text: 19-4755; Rev 0; 12/97 MAX3766 Evaluation Kit The MAX3766 evaluation kit EV kit is an assembled, surface-mount demonstration board that provides easy optical or electrical evaluation of the MAX3766 622Mbps laser driver. Ordering Information PART TEMP. RANGE


    Original     		PDF MAX3766 MAX3766 622Mbps MAX3766EVKIT MAX809M MAX3766EEP BLM11A601S BOURNS 3296 bourns 3296 variable resistor 3 pin 3296 Variable Resistor 3296 Variable Resistor 50KC1 BLM11A601S MAX3766EEP MAX3766EVKIT MAX809M

    atc600s

    Abstract: CRF35010-101 CRF-35010 AVX1206
    Text: CRF-35010-101 10 W, 3400-3800 MHz, SiC RF Power MESFET PRELIMINARY Features • • • • • • • • • Package Type 440101 Application 3.4 - 3.8 GHz Operation 10 dB Small Signal Gain -40 dBc OFDM at 1.5 W 17% Drain Efficiency at 1.5 W 10 W P1dB Internally Matched


    Original     		PDF CRF-35010-101 CRF35010-101 CRF-35010 atc600s CRF35010-101 AVX1206

    A113

    Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station


    Original     		PDF MHVIC2114R2/D MHVIC2114R2 MHVIC2114R2 A113 AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT TAJA105K035R

    smps PCB LAYOUT

    Abstract: MPC5674 IRF7521 IR735 MPC5674F RLF7030T-2R2M5R4 08053C225KAT2A AN3898 DO3316T-222MLB AVX-08053C225KAT2A
    Text: Freescale Semiconductor Application Note Document Number: AN3898 Rev. 1, 07/2009 PCB Layout Guidelines for MPC5674x Switch Mode Power Supply SMPS by: Bill Terry, Allan Dobbin, and Stefano Pietri 32-bit Automotive Applications Engineering Microcontroller Solutions Group


    Original     		PDF AN3898 MPC5674x 32-bit MPC5674F smps PCB LAYOUT MPC5674 IRF7521 IR735 RLF7030T-2R2M5R4 08053C225KAT2A AN3898 DO3316T-222MLB AVX-08053C225KAT2A

    A113

    Abstract: A114 A115 AVX08051J6R8BBT C101 JESD22 MHVIC2114NR2 TAJA105K035R AVX0805
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original     		PDF MHVIC2114NR2 MHVIC2114NR2 A113 A114 A115 AVX08051J6R8BBT C101 JESD22 TAJA105K035R AVX0805

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 4, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original     		PDF MHVIC2114NR2 MHVIC2114NR2

    Untitled

    Abstract: No abstract text available
    Text: TQP3M6004 Datasheet Low Band Dual LNA 700-915 MHz Features Functional Block Diagram RFinA VgateA RFoutA VdrainA A B RFinB VgateB RFoutB VdrainB Groundand andsource Ground Source A, Source B connections may be connections through through the paddle orpackage


    Original     		PDF TQP3M6004 TQP3M6004

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated


    Original     		PDF MHVIC2114NR2 MHVIC2114R2

    AN1955

    Abstract: A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
    Text: MOTOROLA Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC


    Original     		PDF MHVIC2114R2/D MHVIC2114R2 MHVIC2114R2 AN1955 A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT TAJA105K035R

    ATC1206

    Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt

    smps PCB LAYOUT

    Abstract: IRF7521 MPC567xF MPC5674 MPC5674F DO3316T-222MLB RLF7030T-2R2M5R4 IR7353
    Text: Document Number: AN3898 Rev. 1, 07/2009 PCB Layout Guidelines for MPC5674x Switch Mode Power Supply SMPS by: Bill Terry, Allan Dobbin, and Stefano Pietri 32-bit Automotive Applications Engineering Microcontroller Solutions Group 1 Overview Switched regulators have become popular for their


    Original     		PDF AN3898 MPC5674x 32-bit MPC5674F MPC567xF 496CSP smps PCB LAYOUT IRF7521 MPC5674 DO3316T-222MLB RLF7030T-2R2M5R4 IR7353

    220UF 16V

    Abstract: VP1-0059 AVX08055 AVX08055C103MAT2A B260A MIC4680BM TPSE227016R0100
    Text: Application Hint 37d Micrel Application Hint 37d ±12V/125mA Split Power Supply by Jeff Dixon Circuit Performance • Simple solution for dual output • Off-the-shelf magnetics +11.2V to +15V C1 15µF 20V U1 MIC4680BM IN SW 2 OFF 1 SHDN FB T1 3:3 3 4 D1 +12V/125mA


    Original     		PDF 2V/125mA MIC4680BM 2V/125mA TPSC156020R0450 220UF 16V VP1-0059 AVX08055 AVX08055C103MAT2A B260A MIC4680BM TPSE227016R0100

    TQP3M6004

    Abstract: Tower Mounted Amplifiers Schematic Tower Mounted Amplifiers 700 MHZ Tower Mounted Amplifiers Tower Mounted Amplifiers Dual Band M6004 marking L5 AVX-L0805220JESTR Low Noise Amplifiers lna 850 MHz RF 207
    Text: TQP3M6004 Datasheet Low Band Dual LNA 700-915 MHz Features Functional Block Diagram RFinA VgateA RFoutA VdrainA A B RFinB VgateB RFoutB VdrainB Groundand andsource Ground Source A, Source B connections may be connections through through the paddle orpackage


    Original     		PDF TQP3M6004 TQP3M6004 Tower Mounted Amplifiers Schematic Tower Mounted Amplifiers 700 MHZ Tower Mounted Amplifiers Tower Mounted Amplifiers Dual Band M6004 marking L5 AVX-L0805220JESTR Low Noise Amplifiers lna 850 MHz RF 207

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHVIC2114R2 Rev. 4, 8/2006 Freescale Semiconductor Technical Data Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. MHVIC2114R2 The MHVIC2114R2 wideband integrated circuit is designed for base station


    Original     		PDF MHVIC2114R2 MHVIC2114NR2. MHVIC2114R2

    MCR35V

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHVIC2114R2 Rev. 2, 1/2005 Will be replaced by MHVIC2114NR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP−16 package has had lead−free terminations from its initial release. MHVIC2114R2 RF LDMOS Wideband Integrated


    Original     		PDF MHVIC2114NR2 PFP-16 MHVIC2114R2 MCR35V

    Z1C22

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC2114NR2 Rev. 4, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original     		PDF MHVIC2114NR2 MHVIC2114NR2 Z1C22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F