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MACOM CGH40010F-AMP CGH40010F DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40010F-AMP	Box	2		1	1 $974.18 10 $974.18 100 $974.18 1000 $974.18 10000 $974.18	Buy Now
Richardson RFPD	CGH40010F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGH40010F RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40010F	Tray			1	1 $87.51 10 $73.162 100 $73.162 1000 $73.162 10000 $73.162	Buy Now
Mouser Electronics	CGH40010F					1 $76.37 10 $74.29 100 $70.23 1000 $70.23 10000 $70.23	Get Quote
Richardson RFPD	CGH40010F				1	1 $125.41 10 $125.41 100 $125.41 1000 $125.41 10000 $125.41	Buy Now
MACOM CGH40010P RF MOSFET HEMT 28V 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40010P	Tray			250	1 - 10 - 100 - 1000 $65.225 10000 $65.225	Buy Now
Mouser Electronics	CGH40010P		149			1 $91.61 10 $83.63 100 $75.52 1000 $75.52 10000 $75.52	Buy Now
Richardson RFPD	CGH40010P				1	1 $125.41 10 $125.41 100 $125.41 1000 $125.41 10000 $125.41	Buy Now

CGH40010 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
CGH40010	Cree	10 W, RF Power GaN HEMT	Original	PDF
CGH40010F	Cree	RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG	Original	PDF
CGH40010F-AMP	Wolfspeed	CGH40010F DEV BOARD WITH HEMT	Original	PDF
CGH40010F-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010	Original	PDF
CGH40010P	Cree	RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196	Original	PDF

CGH40010 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
str w 6554 a Abstract: STR 6554 a Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a	PDF
Cree Microwave Abstract: No abstract text available Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave	PDF
STR W 5753 a Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F	PDF
str w 6554 a Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808 Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808	PDF
CGH40010 Abstract: CGH40010F 10UF 470PF CGH40010-TB Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB	PDF
str 8656 Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF	PDF
CGH40010F Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22 Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22	PDF
CGH40010F Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40010 CGH40010 CGH40010, CGH40 40010P	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
CGH27015 Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF	PDF
CGH40010 Abstract: No abstract text available Text: Microwave Office Success Story Michael Boers, Ph.D. Student, Wins IEEE MTT-S Power Amplifier Competition, 85% PAE Achieved with Microwave Office Customer Background Michael Boers received his Bachelor of Electrical Engineering degree from the University of Sydney in 2005. Since 2006, he has been working towards	Original		PDF
GaN ADS Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361 Text: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are	Original		PDF
CGH55015F2 Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F	PDF

STR W 5456 A Abstract: CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent IMS2005 IMS2008 IMS2009 LMV552 TEA5768HL Text: TC-Sponsored Contests Message from the MTT-S Technical Coordinating Committee Chair • Richard V. Snyder T he High-Power Microwave Components Committee MTT5 has held a student-based highefficiency power amplifier (PA) design contest since 2005. This allows students	Original	permission2009the STR W 5456 A CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent IMS2005 IMS2008 IMS2009 LMV552 TEA5768HL	PDF
CGH40010 Large Signal Model Abstract: CGH40010 microwave office Cree Microwave Text: PIERS ONLINE, VOL. 6, NO. 2, 2010 141 Design of a Class F Power Amplifier Tian He1 and Uma Balaji2 1 California State University Chico, Chico, CA 95926, USA Farmingdale State College, Farmingdale, NY 11735, USA 2 Abstract— A Class F power amplifier PA at 2.5 GHz has been designed and fabricated. Test	Original		PDF
CGH27015-TB Abstract: CGH27015 Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P CGH27015-TB	PDF
transistor 15478 Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014 Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 15478 TRANSISTOR SMD 9014 transistor 9014 smd data sheet transistor 9014	PDF
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx	PDF
Untitled Abstract: No abstract text available Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P	PDF
ofdm transmitter Abstract: CGH40010 CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen Text: A GaN HEMT Power Amplifier with Variable Gate Bias for Envelope and Phase Signals Ellie Cijvat1 , Kevin Tom2 , Mike Faulkner2 and Henrik Sjöland1 1 2 Dept. of Electrical and Information Technology, Lund University, Sweden P.O. Box 118, SE-221 00 Lund, Sweden	Original	SE-221 CGH40010 com/products/pdf/CGH40010-Rev1 ofdm transmitter CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen	PDF
transistor C1096 Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs	Original		PDF
TRANSISTOR SMD 9014 Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/	Original	CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB	PDF
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original		PDF

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CGH40010 Price and Stock

MACOM CGH40010F-AMP

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CGH40010 Datasheets (5)

CGH40010 Datasheets Context Search

str w 6554 a

Cree Microwave

STR W 5753 a

str w 6554 a

CGH40010

str 8656

CGH40010F

CGH40010F

Untitled

schematic diagram atx Power supply 500w

CGH27015

CGH40010

GaN ADS

CGH55015F2

STR W 5456 A

CGH40010 Large Signal Model

CGH27015-TB

transistor 15478

220v AC voltage stabilizer schematic diagram

Untitled

ofdm transmitter

transistor C1096

TRANSISTOR SMD 9014

CGH40025P