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    Central Semiconductor Corp CJD31C-TR13-PBFREE

    TRANS NPN 100V 3A DPAK
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    DigiKey CJD31C-TR13-PBFREE Reel 2,500
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    CJD31C-TR13-PBFREE Cut Tape 1
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    CJD31C-TR13-PBFREE Digi-Reel 1
    • 1 $1.69
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    Central Semiconductor Corp CJD31CTR13

    3 A, 100 V, NPN, Si, POWER TRANSISTOR
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    Quest Components CJD31CTR13 172
    • 1 $4
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    CJD31C Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CJD31C Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Original PDF
    CJD31C Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Scan PDF
    CJD31C Central Semiconductor COMLEMENTARY SILICON POWER TRANSISTOR Scan PDF
    CJD31C TR13 Central Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 100V 3A DPAK Original PDF
    CJD31C TR13 PBFREE Central Semiconductor TRANS NPN 100V 3A DPAK Original PDF

    CJD31C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Silicon Power Transistors

    Abstract: pnp 500ma 40v CJD31C CJD32C
    Text: CJD31C NPN CJD32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted


    Original     		PDF CJD31C CJD32C CJD31C, CJD32C 375mA 500mA, Silicon Power Transistors pnp 500ma 40v

    Untitled

    Abstract: No abstract text available
    Text: CJD31C NPN CJD32C PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted


    Original     		PDF CJD31C CJD32C 500mA, 375mA 21-January

    transistor

    Abstract: marking JC diode NPN Silicon Power Transistor DPAK dpak code 500ma 40v pnp marking JC data base dpak hFE is transistor marking code TC marking codes
    Text: Central CJD31C NPN CJD32C PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    Original     		PDF CJD31C CJD32C CJD31C, 375mA 500mA, 26-September transistor marking JC diode NPN Silicon Power Transistor DPAK dpak code 500ma 40v pnp marking JC data base dpak hFE is transistor marking code TC marking codes

    Untitled

    Abstract: No abstract text available
    Text: CJD31C NPN CJD32C PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted


    Original     		PDF CJD31C CJD32C 375mA 500mA, 21-January

    mje182 equivalent

    Abstract: MJE182 cp208 transistor CR NPN CJD31C TIP31C
    Text: PROCESS CP208 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å


    Original     		PDF CP208 CJD31C MJE182 TIP31C 22-March mje182 equivalent MJE182 cp208 transistor CR NPN CJD31C TIP31C

    MJE182

    Abstract: mje182 equivalent CJD31C CP208 TIP31C
    Text: Central TM Semiconductor Corp. PROCESS CP208 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 66 X 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 X 24 MILS Emitter Bonding Pad Area 11 X 14 MILS


    Original     		PDF CP208 CJD31C MJE182 TIP31C 16-August MJE182 mje182 equivalent CJD31C CP208 TIP31C

    CJD31C

    Abstract: CP208 MJE182 TIP31C
    Text: PROCESS CP208 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 66 X 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 X 24 MILS Emitter Bonding Pad Area 11 X 14 MILS


    Original     		PDF CP208 CJD31C MJE182 TIP31C 435-1110AILS CJD31C CP208 MJE182 TIP31C

    44H11

    Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
    Text: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 44H11 A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    TRANSISTOR C 608

    Abstract: No abstract text available
    Text: Central" CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N DU CTO R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 26-September TRANSISTOR C 608

    Untitled

    Abstract: No abstract text available
    Text: Central" CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface


    OCR Scan     		PDF CJD31C CJD32C TheCENTRALSEMICONDUCTORCJD31C, 375mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: Central CJD31C NPN CJD32C PNP Sem iconductor Corp. COM PLEM ENTARY SILICON POWER TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a


    OCR Scan     		PDF CJD31C CJD32C CJD31C,

    Untitled

    Abstract: No abstract text available
    Text: Central“ CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 375mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: # C a n tilli vii CJD31C NPN CJD32C PHP COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power


    OCR Scan     		PDF CJD31C CJD32C CJD31C, lg-375mA tQ-500mAsM 500mA,

    CJD31C

    Abstract: CJD32C
    Text: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 375mA 500mA,

    marking code nt amplifier

    Abstract: D 823 transistor
    Text: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DRÂKI! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


    OCR Scan     		PDF CJD31C CJD32C CJD31C, 26-September marking code nt amplifier D 823 transistor

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    BAT 13003 D

    Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
    Text: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836


    OCR Scan     		PDF 30WQ03F 30WQ04F 30WQ05F 30WQ06F 50WF10F 50WF20F 50WF30F 50WF40F BAL99 BAR42 BAT 13003 D SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40

    CJD3055

    Abstract: CZT3055 darlington
    Text: Power Transistore POWER 223 SOT-223 Case A Pow er Transistor C hip in a Sm all Signal Package! DESCRIPTION TYPE NO. NPN CZT31C PNP CZT32C CZT122 CZT127 CZT2955 CZT3055 CZT5338 'c P0 bwc b o BVc e o A MAX (W) (V) MIN (V) MIN MIN MAX AMPL7SWITCH 3.0 2.0 100


    OCR Scan     		PDF OT-223 CZT31C CZT122 CZT3055 CZT5338 CZT32C CZT127 CZT2955 CJD44H11 CJD45H11 CJD3055 darlington

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan     		PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


    OCR Scan     		PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    CSH06

    Abstract: No abstract text available
    Text: Central' Semiconductor Corp. MewProductAnnouncement m m \ DPAK Case Power Transistors Ultra Fast Recovery Rectifiers Schottky Rectifiers DPAK Case Pow er Transistors TYPE NO. 'c pD A (W) BVC b o hFE bvceo •c v CE(SAT) 0 IC <T *b v CEv NPN I (V) (V) PNP


    OCR Scan     		PDF CJD31C CJD41C CJD3055 CJD200 CJD32C CJD42C CJD2955 CJD210 CJD50 CJD100% CSH06

    1N4007 diode SOD 80

    Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode


    OCR Scan     		PDF BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006