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    Vishay Semiconductors BAS285-GS18

    DIODE SCHOT 30V 200MA SOD80
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    DigiKey BAS285-GS18 Cut Tape 15,325 1
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    BAS285-GS18 Digi-Reel 15,325 1
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    BAS285-GS18 Reel 10,000 10,000
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    Vishay Semiconductors BAS285-GS08

    DIODE SCHOT 30V 200MA SOD80
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    DigiKey BAS285-GS08 Digi-Reel 14,387 1
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    BAS285-GS08 Cut Tape 14,387 1
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    BAS285-GS08 Reel 12,500 2,500
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    Nexperia BAS28,235

    DIODE ARRAY GP 75V 215MA SOT143B
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    DigiKey BAS28,235 Digi-Reel 13,051 1
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    BAS28,235 Cut Tape 13,051 1
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    BAS28,235 Reel 1 10,000
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    Mouser Electronics BAS28,235 18,178
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    Rochester Electronics BAS28,235 9,462,507 1
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    TTI BAS28,235 Reel 20,000
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    TME BAS28,235 4,089 1
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    Avnet Silica BAS28,235 10,000 10 Weeks 10,000
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    Chip Stock BAS28,235 23,046
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    EBV Elektronik BAS28,235 10 Weeks 10,000
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    Nexperia BAS28,215

    DIODE ARRAY GP 75V 215MA SOT143B
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    DigiKey BAS28,215 Digi-Reel 5,665 1
    • 1 $0.28
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    BAS28,215 Cut Tape 5,665 1
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    BAS28,215 Reel 3,000 3,000
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    Mouser Electronics BAS28,215 41,102
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    Newark BAS28,215 Reel 120,000 3,000
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    BAS28,215 Cut Tape 84,987 5
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    BAS28,215 Reel 3,000
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    Rochester Electronics BAS28,215 374,000 1
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    TTI BAS28,215 Reel 24,000 3,000
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    TME BAS28,215 311 1
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    Avnet Silica BAS28,215 6 Weeks 3,000
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    Chip One Stop BAS28,215 Cut Tape 3,342
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    Chip Stock BAS28,215 37,306
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    EBV Elektronik BAS28,215 1,200,000 10 Weeks 3,000
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    New Advantage Corporation BAS28,215 1,261,200 1
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    Vishay Semiconductors BAS281-GS08

    DIODE SCHOT 40V 30MA SOD80
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    DigiKey BAS281-GS08 Cut Tape 4,819 1
    • 1 $0.32
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    • 100 $0.32
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    BAS281-GS08 Digi-Reel 4,819 1
    • 1 $0.32
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    BAS281-GS08 Reel 2,500 2,500
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    BAS28 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS28 Central Semiconductor DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Original PDF
    BAS28 Infineon Technologies DIODE SWITCHING 85V 0.2A 4SOT-143 Original PDF
    BAS28 Infineon Technologies Silicon Switching Diode Array for high-speed switching Original PDF
    BAS28 Infineon Technologies High Speed Switching Diodes; Package: PG-SOT143-4; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 100.0 nA; trr (max): 4.0 ns; Original PDF
    BAS28 Kexin High Speed Double Diode Original PDF
    BAS28 NXP Semiconductors BAS28 - High-speed double diode - Cd max.: 1.5 pF; Configuration: dual isolated ; IF max: 215 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V Original PDF
    BAS28 Philips Semiconductors High-speed double diode Original PDF
    BAS28 Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
    BAS28 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAS28 Siemens Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Original PDF
    BAS28 TY Semiconductor High Speed Double Diode - SOT-143 Original PDF
    BAS28 Central Semiconductor DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Scan PDF
    BAS28 Central Semiconductor SURFACE MOUNTED DEVICES Scan PDF
    BAS28 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS28 Philips Semiconductors High-speed double diode Scan PDF
    BAS281 Vishay Intertechnology Schottky Barrier Diode Original PDF
    BAS281 Vishay Semiconductors Small SIgnal Schottky Barrier Diodes Original PDF
    BAS281-GS08 Vishay Intertechnology Small SIgnal Schottky Barrier Diode Original PDF
    BAS281-GS18 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY SOD80 Original PDF
    BAS282 Vishay Intertechnology Schottky Barrier Diode Original PDF

    BAS28 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BAS286

    Abstract: BAS286-GS08
    Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009


    Original
    BAS286 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 BAS286 BAS286-GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r VR 75 V P e a k re ve rs e vo lta g e


    Original
    BAS28W OT-343 PDF

    BAS28 nxp

    Abstract: BAS28 diode Marking code v3
    Text: BAS28 High-speed double diode Rev. 3 — 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not


    Original
    BAS28 OT143B AEC-Q101 BAS28 nxp BAS28 diode Marking code v3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009


    Original
    BAS281 OD-80) BAS282 BAS283 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009


    Original
    BAS286 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 BAS286 BAS286-GS18 BAS286-GS08 PDF

    BAS286

    Abstract: BAS286-GS08
    Text: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009


    Original
    BAS286 2002/95/EC 2002/96/EC GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 18-Jul-08 BAS286 BAS286-GS08 PDF

    85500 transistor

    Abstract: BAS281 BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80
    Text: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


    Original
    BAS281 2002/95/EC 2002/96/EC 18-Jul-08 85500 transistor BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80 PDF

    85500 transistor

    Abstract: K 85500 BAS281 BAS282 BAS283
    Text: BAS281.BAS283 Vishay Telefunken Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and switching


    Original
    BAS281. BAS283 BAS281 BAS282 D-74025 01-Apr-99 85500 transistor K 85500 BAS281 BAS282 BAS283 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS285 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 9612009 Mechanical Data


    Original
    BAS285 OD-80) BAS285 BAS285-GS18 BAS285-GS08 D-74025 16-Mar-04 PDF

    marking CODE JTS

    Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
    Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343


    Original
    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, marking CODE JTS BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420 PDF

    BAS28

    Abstract: No abstract text available
    Text: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original
    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, PDF

    BAS28

    Abstract: No abstract text available
    Text: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original
    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, PDF

    marking CODE JTS

    Abstract: BAS28
    Text: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original
    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, marking CODE JTS PDF

    BAS286

    Abstract: No abstract text available
    Text: BAS286 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 96 12009 Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter


    Original
    BAS286 50mmx50mmx1 D-74025 01-Apr-99 BAS286 PDF

    JTs smd diode

    Abstract: smd diode marking Ja smd JS marking JTs datasheet mv 103 smd diode UM BAS28W th460 smd marking SOT343
    Text: Diodes SMD Type Silicon Switching Diode Array BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r


    Original
    BAS28W OT-343 JTs smd diode smd diode marking Ja smd JS marking JTs datasheet mv 103 smd diode UM BAS28W th460 smd marking SOT343 PDF

    JT MARKING

    Abstract: BAS28
    Text: Diodes SMD Type High-Speed Double Diode BAS28 Unit: mm Features Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA . Absolute Maximum Ratings Ta = 25


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    BAS28 JT MARKING BAS28 PDF

    JTW "sot143"

    Abstract: MARKING CODE jtw marking jtw sot marking CODE JTW diode a61 "sot143" MARKING CODE R7 DIODE BAS28 marking jtw
    Text: BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


    Original
    BAS28 BAS28 OT-143 OT-143 150mA 20-October JTW "sot143" MARKING CODE jtw marking jtw sot marking CODE JTW diode a61 "sot143" MARKING CODE R7 DIODE marking jtw PDF

    Untitled

    Abstract: No abstract text available
    Text: _ BAS286 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forw ard voltage Applications A pplications w here a ve ry low forw ard voltage is required Absolute Maximum Ratings


    OCR Scan
    BAS286 x50ve D-74025 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.


    OCR Scan
    BAS28 BAS28 BAW62; PDF

    oscilloscope pc

    Abstract: BAS28 BAW62
    Text: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.


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    bbS3S31 0Q24B7Ã BAS28 BAS28 oscilloscope pc BAW62 PDF

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


    OCR Scan
    BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6 PDF

    a61 "sot143"

    Abstract: No abstract text available
    Text: Central BAS28 Semiconductor Corp. DUAL, ISOLATED HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


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    BAS28 OT-143 150mA 500i2 a61 "sot143" PDF

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


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    BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm PDF

    K 85500

    Abstract: 85500 BAS281
    Text: BAS281 .BAS283 Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static discharge • • Low capacitance Low leakage current • Low forward voltage drop • Very low switching time Applications General purpose and switching


    OCR Scan
    BAS281 BAS283 BAS281 BAS282 01-Apr-99 K 85500 85500 PDF