Contextual Info: CMPD2003 CMPD2003A CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,

MPD200

Abstract: MPD300 Forward Reference Diode "Direct Replacement" CMPD200 CMPD300 CMPD400 MPD400
Contextual Info: Data Sheet Central CMPD200 CMPD300 CMPD400 Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 FORWARD REFERENCE DIODE (STABISTOR) JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors

1N4148 SOD-80

Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
Contextual Info: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23

Contextual Info: CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial

MARKING CODE R7 DIODE

Abstract: MARKING CODE R7 R7 MARKING CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S
Contextual Info: CMPD2003 CMPD2003C CMPD2003S Central CMPD2004 CMPD2004A CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured

SOT23 DIODE marking CODE 28

Abstract: marking db8 sot23 marking code NA sot23 MARKING D53 SOT23 marking c2 diode A1 sot23 marking code d53 MARKING CODE SOT23 marking code C2 diode DIODE marking 10 A A82 MARKING CODE
Contextual Info: CMPD2003 CMPD2003C CMPD2003S Central CMPD2004 CMPD2004A CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured

MARKING 1S SOT-23

Abstract: DB5 SOT-23
Contextual Info: Central CMPD2005S TM Semiconductor Corp. DUAL, IN SERIES HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface

Contextual Info: CMPD2003 CMPD2003C CMPD2003S Central" CMPD2004 CMPD2004A CMPD2004C CMPD2004S Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured

Contextual Info: Stabistors Forward Reference Diodes — — O — T Y P E NO. V 00 MIN MAX 1N816 - - C1N4156 - CMPD200 @ IF VF (mA) (V) MIN MAX \I f @ IF (mA) 0/) (mA) - - - - - - 0.90 1.00 0.01 CMPD300 1.40 1.54 CMPD400 1.82 CN4156 MIN MAX - 0.58 0.70 - - 1.21 1.05

CMPD2005S

Abstract: Marking codes
Contextual Info: CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial

Contextual Info: CMPD200 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.76 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)25’

MarKING Jxs sot23

Abstract: A82/MARKING MARKING D53 C2 marking code marking code C1 marking code c2 marking code LA CMPD2003 CMPD2004 CMPD2004S
Contextual Info: Central" CMPD2003 CMPD2004 CMPD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for

SMD diode C5C

Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
Contextual Info: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23

CMPD2005S

Abstract: DB5 SOT-23
Contextual Info: Central CMPD2005S TM Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a

CMPD2004S

Abstract: MARKING D53 SOT23
Contextual Info: Central CMPD2003 CMPD2004 CMPD2004S sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for

diode marking r5

Abstract: marking c2 diode MARKING D53 SOT23 diode Marking code A2 marking code C2 diode diode MARKING CODE C2 sot23 marking UA marking code tm marking c3s
Contextual Info: Central CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2003,CMPD2003C, CMPD2003S, CMPD2004,CMPD2004C and CMPD200S types are silicon switching diodes manufactured by the epitaxial planar process, designed for

8A2 DIODE

Abstract: 8a2 marking marking db6 MARKING D53 SOT23 r8 marking MARKING D53 transistor A82 CMPD2003 d53 MARKING CODE SOT23 CMPD2003C
Contextual Info: CMPD2003 CMPD2003A CMPD2003C CMPD2003S Central CMPD2004 CMPD2004A CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes

marking db6

Abstract: marking c3s marking D53 SOT-23 marking a8 transistor A82 CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C
Contextual Info: Central CMPD2003 É'” CMPD2003C  ^ CMPD2003S CMPD2004 É'” CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon

Contextual Info: Central CMPD2003 WÉW/ CMPD2003C HOU! CMPD2003S CMPD2004 m / l CMPD2004C CMPD2004S Srnnlconductof Corp. DESCRIPTION SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon

marking code 327 sot23

Abstract: 326 SOT
Contextual Info: Central' CMPD2005S Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CMPD2004 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

marking code 17 surface mount diode

Abstract: CMPD2005S Marking codes F10 SOT23
Contextual Info: Central CMPD2005S CMPD2005SG TM Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES Description: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial

"MARKING CODE A8*"

Abstract: transistor A82 CMPD2003 CMPD2004 CMPD2004S A82 MARKING CODE
Contextual Info: Central CMPD2003 CMPD2004 CMPD2004S TM Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

marking db8 sot23

Abstract: marking db6 8A2 DIODE CMPD2003 CMPD2003A CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C
Contextual Info: CMPD2003 CMPD2003A CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,