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    Infineon Technologies AG CY7C1021DV33-10BVXI

    SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1021DV33-10BVXI 2,217
    • 1 $4.6
    • 10 $3.3
    • 100 $3.3
    • 1000 $3.3
    • 10000 $3.25
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    Infineon Technologies AG CY7C1021DV33-10ZSXI

    SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1021DV33-10ZSXI 1,355
    • 1 $2.98
    • 10 $2.63
    • 100 $2.28
    • 1000 $1.97
    • 10000 $1.77
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    Infineon Technologies AG CY7C1021DV33-10ZSXIT

    SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1021DV33-10ZSXIT 1,004
    • 1 $2.73
    • 10 $2.56
    • 100 $2.37
    • 1000 $1.97
    • 10000 $1.9
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    Infineon Technologies AG CY7C1021DV33-10BVXIT

    SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1021DV33-10BVXIT 952
    • 1 $3.3
    • 10 $3.3
    • 100 $3.3
    • 1000 $3.3
    • 10000 $3.17
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    Infineon Technologies AG CY7C1021DV33-10VXIT

    SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CY7C1021DV33-10VXIT 869
    • 1 $2.73
    • 10 $2.43
    • 100 $2.29
    • 1000 $2.07
    • 10000 $2.07
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    CY7C1021 Datasheets (351)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1021 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-10 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-10 Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY7C1021-10VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-10VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-10ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-10ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12 Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12 Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY7C1021-12VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12VC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12VC Cypress Semiconductor 64K x 16 Static RAM Scan PDF
    CY7C1021-12VCT Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12VI Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12VI Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021-12ZC Cypress Semiconductor 64K x 16 Static RAM Original PDF
    ...

    CY7C1021 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7C1021

    Abstract: C2223 ge639 A12C CY7C1021
    Text: CYPRESS Features • 12 ns • C M O S for optim um speed/pow er • L ow active power — 1020 mW • A vailable in 450 x 550-m il LCC • A utom atic power-down w hen deselected • E asy m em ory exp an sion w ith C Ej, CE 2, and O E options CY7C1021 64K x 16 Static RAM


    OCR Scan     		CY7C1021 550-mil CY7C1021 l/016 7C1021 7C102Xâ 7C1021 C2223 ge639 A12C PDF

    CY7C1021V30

    Abstract: CY7C1021V30-15BAI
    Text: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0


    OCR Scan     		CY7C1021V30 48-ball CY7C1021V30 CY7C1021V30-15BAI PDF

    CY7C1021BV33

    Abstract: CY7C1021CV33 TSOP 48 thermal resistance
    Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		CY7C1021CV33 CY7C1021CV33 CY7C1021BV33 Pb-fre1/02 CY7C1021BV33 TSOP 48 thermal resistance PDF

    550mi

    Abstract: No abstract text available
    Text: 7c1021: March 31,1995 Revised: June 25,1996 CY7C1021 64K x 16 Static RAM ADVANCED INFORMATION Features Functional Description The CY7C1021 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		7c1021: 550-mil CY7C1021 I/O13 I/O10 7C1021--12 7C1021--15 7C1021--20 550mi PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		CY7C1021V30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021 P Yi. PX :V«*1 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through I/0 1 6) is written into the location speci­


    OCR Scan     		CY7C1021 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021CV33 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C ■ Pin and function compatible with CY7C1021CV33


    Original     		CY7C1021CV33 44-pin 44-pin 48-ball CY7C1021CV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball PDF

    CY7C1021BN-15VI

    Abstract: CY7C1021BN
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN-15VI CY7C1021BN PDF

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN PDF

    CY7C1021CV33

    Abstract: CY7C1021DV33 CY7C1021DV33-10VXI
    Text: CY7C1021DV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		CY7C1021DV33 CY7C1021DV33 CY7C1021CV33 I/O16 I/O15 83MHz, 66MHz 40MHz CY7C1021CV33 CY7C1021DV33-10VXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power


    Original     		CY7C1021D CY7C1021B 44-pin 400-mil CY7C1021D PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D 1-Mbit 64K x 16 Static RAM Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected


    Original     		CY7C1021D CY7C1021B 44-pin 400-Mil 83MHz, 66MHz 40MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40 °C to 85 °C The CY7C1021D is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an


    Original     		CY7C1021D CY7C1021D PDF

    CY7C1021V30

    Abstract: CY7C1021V30-15BSI
    Text: fax id: 1083 1CY 7C10 21 V ADVANCED INFORMATION CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version)


    Original     		CY7C1021V30 CY7C1021V30 CY7C1021V30-15BSI PDF

    CY7C1021BV

    Abstract: CY7C1021BV33
    Text: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		1CY7C1021BV33 CY7C1021BV33 I/O16) CY7C1021BV CY7C1021BV33 PDF

    CY7C1021BNV33

    Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI PDF

    CY7C1021B-15ZSXE

    Abstract: CY7C1021B-12ZXC CY7C1021B
    Text: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable


    Original     		CY7C1021B I/O16) CY7C10211B CY7C1021B-15ZSXE CY7C1021B-12ZXC CY7C1021B PDF

    CY7C1021

    Abstract: 7c1021
    Text: 7c1021: March 31, 1995 Revised: June 25, 1996 ADVANCED INFORMATION CY7C1021 64K x 16 Static RAM Features D Functional Description The CY7C1021 is a highĆperformance CMOS static RAM organized as 65,536 words by 16 bits. Easy memory expansion is provided by an active LOW chip enable


    Original     		7c1021: CY7C1021 CY7C1021 I/O15) I/O15 7C1021-12 7C1021-15 7C1021-20 7c1021 PDF

    CY7C1021CV33

    Abstract: CY7C1021DV33 CY7C1021DV33-10VXI TSOP 66 Package thermal resistance
    Text: CY7C1021DV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021DV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		CY7C1021DV33 CY7C1021DV33 CY7C1021CV33 CY7C1021CV33 CY7C1021DV33-10VXI TSOP 66 Package thermal resistance PDF

    CY7C1021CV26

    Abstract: No abstract text available
    Text: CY7C1021CV26 1-Mbit 64K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Range Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable


    Original     		CY7C1021CV26 I/O16) CY7C1021CV26 44-Lead 400-Mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C10212CV33-12BAXET Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CY7C10212CV33-12BAXET Automotive Qualified Y Min. Operating Voltage V


    Original     		CY7C10212CV33-12BAXET 10Last AN6081 90-nm PIN135200 CY7C10212CV33-12BAXET PDF

    CY7C1021V33-15VI

    Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI
    Text: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		CY7C1021V I/O16) CY7C1021V33-15VI 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021DV33 1-Mbit 64 K x 16 Static RAM Features Functional Description[1] • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin-and function-compatible with CY7C1021CV33 The CY7C1021DV33 is a high-performance CMOS static


    Original     		CY7C1021DV33 CY7C1021DV33 I/O15) PDF