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Cypress Semiconductor CY7C1021V33L-15ZI
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CY7C1021V33L15ZI Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CY7C1021V33L-15ZI		Cypress Semiconductor	64K x 16 Static RAM		Original	PDF

CY7C1021V33L15ZI Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CY7C1021V33-15VI Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI Text: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0	Original	CY7C1021V I/O16) CY7C1021V33-15VI 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI	PDF
CY7C1021V Abstract: No abstract text available Text: 021V CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.)	Original	CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V	PDF
KM62256BLG-7 Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC	Original	C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12	PDF
CY7C1021V Abstract: No abstract text available Text: CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected	Original	CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V	PDF
A12C Abstract: A14C A15C CY7C1021V Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/Og), is written into the location specified on the address pins (Aq	OCR Scan	44-pin 400-mil CY7C1021V CY7C1021V A12C A14C A15C	PDF
1021V Abstract: No abstract text available Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-\| through l/Og), is written into the location specified on the address pins (Aq	OCR Scan	44-pin 400-mil 1021V	PDF
CY7C1021V33 Abstract: 1021V-10 3310Z Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O i through l/0 8), is written into the location specified on the address pins (A0	OCR Scan	10/12/15n 44-pin 400-m CY7C1021V33 1021V-10 3310Z	PDF