DDDG311 Search Results

HY514100-80

Abstract: ascl2
Contextual Info: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)

Contextual Info: pS mm Aperture Package Schematic Emitter Sensor DUAL CHANNEL SLOTTED T111N 1T Ll 'DI VDKTLT1 PITLi 'P K aC VW Ti lTl fvTlTl H21A3 Typ. T‘ o f f H21A2 Typ. W Ton <Tf * Ip = 5mA Ip = 20mA Ip = 30mA v cc = 5V, \ K)R= Ip = 1mA Ip = 30mA Ip = 1mA Ip = 30mA 60