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    HY514100-80

    Abstract: ascl2
    Text: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)


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    PDF QDDG311 HY514100 M191200A-M T-H6-23-Ã 100ns HY514100. 512KX8 HY514100-80 ascl2

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    Abstract: No abstract text available
    Text: pS mm Aperture Package Schematic Emitter Sensor DUAL CHANNEL SLOTTED T111N 1T Ll 'DI VDKTLT1 PITLi 'P K aC VW Ti lTl fvTlTl H21A3 Typ. T‘ o f f H21A2 Typ. W Ton <Tf * Ip = 5mA Ip = 20mA Ip = 30mA v cc = 5V, \ K)R= Ip = 1mA Ip = 30mA Ip = 1mA Ip = 30mA 60


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    PDF H21A2 H21A3 DD00321