Untitled
Abstract: No abstract text available
Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514100B
HY514100B
4b750Ã
000413b
1AC09-10-MAY95
HY514100BJ
HY514100BLJ
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HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 4 4 1 0 A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY514410A is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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HY514410A
8-10-A
4b750fl
000147b
HY514410AJ
HY514410AU
HY514410AT
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
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HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
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HY53C464
Abstract: HY53C464-70 536X4 65536x4
Text: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)
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G000Sb3
M121202B-JAN92
HY53C464
536X4
HY53C464L)
HY53G464
PACKAGE-300
T-46-23-17
HY53C464-70
65536x4
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HY628100
Abstract: No abstract text available
Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100
128Kx
85/100/120ns
1DD01-11-MAY94
ML750Ã
GD0373b
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Untitled
Abstract: No abstract text available
Text: HY51V17405B Series •HYUNDAI 4M x 4-bit CMOS DRAM with Burst EDO DESCRIPTION The HY51V17405B is the new generation and fast dynamic RAM organized 4,194,304x4-bit. The HY51V17405B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques to prove wide
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HY51V17405B
304x4-bit.
HY51V17405B
1AD61-00-MAY95
HY51V17405BJC
HY51V17405BSLJC
HY51V17405BTC
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Untitled
Abstract: No abstract text available
Text: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni
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HY638256
HY638256
15/17/20/25ns
150mA
140mA
130mA
300mil
1DF01-11-MAY94
00G3724
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Untitled
Abstract: No abstract text available
Text: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL
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HY57V641610/
HY57V641620/
HY57V651610/
HY57V651620
HY57V641611/
HY57V641621/
HY57V651611/
HY57V651621
HY57V641610
HY57V641620
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HY51V16404B
Abstract: HY51V16404BR60 si17 MH-750
Text: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY51V16404B
TheHY51V16404B
1AD51
-10-MAY95
4b75Dflfl
HY51V16404BJ
HY51V16404BSLJ
HY51V16404BR60
si17
MH-750
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Untitled
Abstract: No abstract text available
Text: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17400B
51V17400B
HY51V17400Bto
1AD48-00-MAY95
HY51V17400BJ
HY51V17400BSU
HY51V17400BT
HY51V17400SLT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each
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HYM540400
40-bit
HY5116400
22/iF
HYM540400M/LM/TM/LTM
HYM540400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM54Ã
400TM/TMG
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HY638256T1
Abstract: HY638256 AM524 HY638256J15
Text: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees
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HY638256
15/17/20/25ns
100mA
100pA
T0-008
4b75DÃ
1DF01-22-MAY95
HY638256T1
AM524
HY638256J15
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HY514100-80
Abstract: ascl2
Text: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)
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QDDG311
HY514100
M191200A-M
T-H6-23-Ã
100ns
HY514100.
512KX8
HY514100-80
ascl2
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Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y 5 1 4 4 1 O A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-BIt DESCRIPTION The HY514410A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. TVte HY514410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
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HY514410A
06CK127
-20-MAY94
000ESDÃ
HY514410AJ
HY514410AU
HY514410AT
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5118160B
16-bit.
HY5118160B
1ADS4-104IIAY9S
HY5118160BJC
HY5118160BSLJC
HY5118160BTC
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve
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256KX
16-bit
HY51V4260B
400mil
40pin
40/44pin
1AC26-00-MAY94
4b75Gflfl
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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16-bit
16bits
1VC02-00-MAY95
HY5216257
525mil
64pin
4b750flfl
1VC02-00-MAY9S
HY5216256GE
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576
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HY57V16801
152x8bits,
1SD02-00-MAY95
4L750fifi
400mil
4b750flfi
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Untitled
Abstract: No abstract text available
Text: HY534256A Series “ H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION ITie HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY534256A
HY534256Autilizes
HY534256Ato
300mil
750flfl
G004073
1AB06-10-MAY95
HY534256AS
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ci 28448
Abstract: No abstract text available
Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI
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HY534256A
4b75Dflfl
000b7cÃ
M1C1200A-JAN92
PACKAGE-300
400MIL
ci 28448
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