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    Text: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V17400B 51V17400B HY51V17400Bto 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSU HY51V17400BT HY51V17400SLT PDF