DS2064
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: July 2, 1996 Subject: PRODUCT CHANGE NOTICE – E63001 Description: Product Obsolescence: DS2064 Low–Voltage Option Description of Change: Effective September 30, 1996, all DS2064 devices will become 5–volt–only products. All low–voltage specifications for both AC and DC parameters will be removed from the DS2064 Data Sheet and
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E63001
DS2064
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K19 FET
Abstract: plc fire protection DS1265W DS2065W DS2065W-100
Text: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
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DS2065W
256-ball
K19 FET
plc fire protection
DS1265W
DS2065W-100
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CS8952
Abstract: CS8952-IQ
Text: 08/14/00 Errata: CS8952-IQ Performance Update Reference CS8952 Data Sheet revision DS206PP2 dated Jul ’98 • Add part number to Ordering Information on page 1 of the datasheet. - CS8952-IQ -40° C to +85° C 100-pin TQFP • On page 4, add the following row to the RECOMMENDED OPERATING
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CS8952-IQ
CS8952
DS206PP2
100-pin
CS8952-IQ
ER206E1
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XC6SLX9-TQG144-2C
Abstract: XC6SLX45-CSG324 XC6SLX16-CSG225 XC6SLX16-FTG256 XC6SLX16-CSG324 XC6SLX4-TQG144-2C XC6SLX45-CSG484 XC6SLX9-CSG225 XC3S1400A-FG676-4C/I XC6SLX45-FGG484
Text: 32-Bit Initiator/Target v3 & v4 for PCI DS206 December 2, 2009 Product Specification v3.167 & v4.11 Features • Fully compliant 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution • Pre-defined implementation for predictable timing
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32-Bit
DS206
32-bit,
XC6SLX9-TQG144-2C
XC6SLX45-CSG324
XC6SLX16-CSG225
XC6SLX16-FTG256
XC6SLX16-CSG324
XC6SLX4-TQG144-2C
XC6SLX45-CSG484
XC6SLX9-CSG225
XC3S1400A-FG676-4C/I
XC6SLX45-FGG484
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XC7K325TFFG900
Abstract: XC6SLX45-CSG324 XC3SD3400AFG676 XC7K325T-ffg900 spartan ucf file 6 XC6SLX16-FTG256 XC6SLX25-CSG324-2C XC6SLX16-CSG324 XC6SLX45-FGG484 XC7K355T-FFG901
Text: LogiCORE IP 32-Bit Initiator/Target v3 & v4 for PCI DS206 October 19, 2011 Product Specification v3.167 & v4.15 Features LogiCORE IP Facts Table • Fully compatible 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution
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32-Bit
DS206
32-bit,
XC7K325TFFG900
XC6SLX45-CSG324
XC3SD3400AFG676
XC7K325T-ffg900
spartan ucf file 6
XC6SLX16-FTG256
XC6SLX25-CSG324-2C
XC6SLX16-CSG324
XC6SLX45-FGG484
XC7K355T-FFG901
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XC2S150pq208
Abstract: xc2s50-pq208 XCV1000EFG680-6C XC2S150PQ208-5C XC2S200ePQ208 XC2S300EPQ208-6C xcv1000efg680 XCV300BG432 2S50E-PQ208-6C XC3S1000-FG456-4C
Text: LogiCORE PCI32 Interface v3.0 DS206 October 28, 2003 Introduction Data Sheet, v3.0.116 LogiCORE Facts With the Xilinx LogiCORE PCI Interface, a designer can build a customized, fully PCI 2.3-compliant core with the highest possible sustained performance, 528 Mbytes/sec.
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PCI32
DS206
32-bit,
32-bit
64/32-bit
PC32/33
XC2S150pq208
xc2s50-pq208
XCV1000EFG680-6C
XC2S150PQ208-5C
XC2S200ePQ208
XC2S300EPQ208-6C
xcv1000efg680
XCV300BG432
2S50E-PQ208-6C
XC3S1000-FG456-4C
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DIN 65536
Abstract: FA 600 DS2064 DS2064S
Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V
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DS2064
DS2064S
DIN 65536
FA 600
DS2064
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DS2068
Abstract: DS2068S 8K X 8 Static RAM 100N 100NS H000402 for 64K RAM RAM64K 90-2068S DALLAS SOIC PRODUCT CHANGE
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 10, 2000 Product Change Notice – H000402 Subject: Product Obsolescence – DS2068 8K x 8 Static RAM Description of Change: Effective July 10, 2000 Dallas Semiconductor will no longer produce the DS2068 8K x 8 Static
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H000402
DS2068
DS2068
LH5164A/AH
100NS
90-2068S-000
90-2068S-TRL
DS2068S
8K X 8 Static RAM
100N
100NS
H000402
for 64K RAM
RAM64K
90-2068S
DALLAS SOIC PRODUCT CHANGE
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DS2064
Abstract: DS2064S H50801
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 19, 1995 Subject: PRODUCT CHANGE NOTICE – H50801 Description: DS2064 and DS2064S Change Description of Change: This change affects DS2064 and DS2064S devices only. Operating current (Icco) will change to 70mA
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H50801
DS2064
DS2064S
200ns,
200ns
150ns
70ning
H50801
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DS1265W
Abstract: DS2065W DS2065W-100
Text: Rev 2; 10/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
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DS2065W
256-ball
DS2065W
DS1265W
DS2065W-100
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CS8952
Abstract: CS8952T 0x19
Text: Errata: CS8952 - Silicon revision: F Reference CS8952 Data Sheet revision DS206PP3 dated October 2001. Link Status Change Interrupt Description The datasheets for the CS8952 and CS8952T state that an interrupt can be generated on a link status change. This is true for 100 Mbps mode.
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CS8952
DS206PP3
CS8952T
ER206F1
0x19
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DALLAS SEMICONDUCTOR Ds1235
Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257
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E71301
DS2016,
DS2064,
DS2068,
DS2257
DS2257.
DS1217
DALLAS SEMICONDUCTOR Ds1235
megatest tester
DS1235
ds1630
megatest tester datasheet
DS2237
DS1217
dallas ds1230
DS1220
ON SEMICONDUCTOR TRACEABILITY
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DS2064
Abstract: DS2064S
Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V
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DS2064
DS2064S
DS2064
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Untitled
Abstract: No abstract text available
Text: Rev 1; 5/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
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DS2065W
256-ball
DS2065W
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ram 2064
Abstract: Static RAM 2064
Text: DS2064 DALLAS SEMICONDUCTOR FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V
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DS2064
DS2064
DS2064S
28-PIN
ram 2064
Static RAM 2064
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DS2064
Abstract: DS2064S
Text: DS 2064 DALLAS DS2064 8K x 8 Static RAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Low pow er C M OS design • S tandby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 nA max at tA = 60°C V Cc = 3.0V V Cc = 5.5V V q c = 5.5V □ V cc 27 □ WE
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DS2064
28-pin
DS2064S
DS2064
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Untitled
Abstract: No abstract text available
Text: DS2064, DS2064S DALLAS SEMICONDUCTOR DS2064, DS2064S 8K x 8 FEATURES 3V Operation Static RAM PIN ASSIGNMENT • Low power CMOS design • Standby current NC C 1 28 A12 C 2 27 A7 C 3 26 A 6C 4 25 A5 L 5 24 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V
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DS2064,
DS2064S
28-PIN
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □ CE2 25 □
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DS2064
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DS206
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIG NM ENT FEATURES Vcc 24 = 6 23 □ A11 7 22 □ • Data Retention Voltage OE A2 C 8 21 □ A10 A1 C 9 20 □ ceT 10 19 □ DQ7 27 C E 3 26 4 25 A5 C 5 A4 C A3 C A7 A6 5.5V to 2.0V • Access time equals 150 ns at 5.0V and 300 ns at 3.0V
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DS2064
28-pin
DS2064S
DS206
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Static RAM 2064
Abstract: 2064 eprom
Text: D S 2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □
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DS2064
Static RAM 2064
2064 eprom
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current NC C 1 28 3 Vcc A12 C 2 27 3 WË A7 C 3 26 3 CE2 A6 C 4 25 D A8 3 3 3 3 3 3 3 3 3 3 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V
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DS2064
DS2064S
28-PIN
28-PIN
2bl4130
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2064 ram
Abstract: No abstract text available
Text: DS2064 DALLAS s e m ic o n d u c to r FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V
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DS2064
DS2064
DS2064S
28-PIN
2064 ram
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Untitled
Abstract: No abstract text available
Text: DS2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design 28 □ V cc A12 C 2 27 □ WE A7 C 3 28 CE2 A6 L 4 25 A5 L_ 5 24 A4 C 6 23 ASC 7 22 J 3 J J J A2 C S 21 n A10 A1 C 9 20 AC u 10 19 DQ0 L 11 OQ1 C 12 OQ2 C
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DS2064
28-pin
DS2064
65536-bit
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Untitled
Abstract: No abstract text available
Text: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V
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DS2064
28-PIN
2L1413D
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