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    Pentair Equipment Protection - Hoffman PDS206D

    SOLID DOOR 2000X600MM
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    DigiKey PDS206D Bulk 1
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    OWON Technology VDS2064

    O-SCOPE 60MHZ 4 CH 1GS/S
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    DigiKey VDS2064 Box 1
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    Pentair Equipment Protection - Hoffman PDS206G

    DOOR SOLID 2000X600 GR
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    OWON Technology VDS2062

    O-SCOPE 60MHZ 2 CH 1GS/S
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    DigiKey VDS2062 Box 1
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    Pentair Equipment Protection - Hoffman PDS206B

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    DigiKey PDS206B Bulk 1
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    DS206 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS2064 Dallas Semiconductor 8K x 8 Static RAM Original PDF
    DS2064-200 Maxim Integrated Products 8K x 8 Static RAM Original PDF
    DS2064-200 Dallas Semiconductor 8K x 8 Static RAM Scan PDF
    DS2064S-200 Dallas Semiconductor 8K x 8 Static RAM Original PDF
    DS2064S-200 Dallas Semiconductor 8K x 8 Static RAM Scan PDF
    DS2065W Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF
    DS2065W-100 Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF
    DS2065W-100# Maxim Integrated Products 3.3V Single-Piece 8Mb Nonvolatile SRAM Original PDF

    DS206 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DS2064

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: July 2, 1996 Subject: PRODUCT CHANGE NOTICE – E63001 Description: Product Obsolescence: DS2064 Low–Voltage Option Description of Change: Effective September 30, 1996, all DS2064 devices will become 5–volt–only products. All low–voltage specifications for both AC and DC parameters will be removed from the DS2064 Data Sheet and


    Original     		E63001 DS2064 PDF

    K19 FET

    Abstract: plc fire protection DS1265W DS2065W DS2065W-100
    Text: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


    Original     		DS2065W 256-ball K19 FET plc fire protection DS1265W DS2065W-100 PDF

    CS8952

    Abstract: CS8952-IQ
    Text: 08/14/00 Errata: CS8952-IQ Performance Update Reference CS8952 Data Sheet revision DS206PP2 dated Jul ’98 • Add part number to Ordering Information on page 1 of the datasheet. - CS8952-IQ -40° C to +85° C 100-pin TQFP • On page 4, add the following row to the RECOMMENDED OPERATING


    Original     		CS8952-IQ CS8952 DS206PP2 100-pin CS8952-IQ ER206E1 PDF

    XC6SLX9-TQG144-2C

    Abstract: XC6SLX45-CSG324 XC6SLX16-CSG225 XC6SLX16-FTG256 XC6SLX16-CSG324 XC6SLX4-TQG144-2C XC6SLX45-CSG484 XC6SLX9-CSG225 XC3S1400A-FG676-4C/I XC6SLX45-FGG484
    Text: 32-Bit Initiator/Target v3 & v4 for PCI DS206 December 2, 2009 Product Specification v3.167 & v4.11 Features • Fully compliant 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution • Pre-defined implementation for predictable timing


    Original     		32-Bit DS206 32-bit, XC6SLX9-TQG144-2C XC6SLX45-CSG324 XC6SLX16-CSG225 XC6SLX16-FTG256 XC6SLX16-CSG324 XC6SLX4-TQG144-2C XC6SLX45-CSG484 XC6SLX9-CSG225 XC3S1400A-FG676-4C/I XC6SLX45-FGG484 PDF

    XC7K325TFFG900

    Abstract: XC6SLX45-CSG324 XC3SD3400AFG676 XC7K325T-ffg900 spartan ucf file 6 XC6SLX16-FTG256 XC6SLX25-CSG324-2C XC6SLX16-CSG324 XC6SLX45-FGG484 XC7K355T-FFG901
    Text: LogiCORE IP 32-Bit Initiator/Target v3 & v4 for PCI DS206 October 19, 2011 Product Specification v3.167 & v4.15 Features LogiCORE IP Facts Table • Fully compatible 32-bit, 66/33 MHz Initiator/Target core for PCI • Customizable, programmable, single-chip solution


    Original     		32-Bit DS206 32-bit, XC7K325TFFG900 XC6SLX45-CSG324 XC3SD3400AFG676 XC7K325T-ffg900 spartan ucf file 6 XC6SLX16-FTG256 XC6SLX25-CSG324-2C XC6SLX16-CSG324 XC6SLX45-FGG484 XC7K355T-FFG901 PDF

    XC2S150pq208

    Abstract: xc2s50-pq208 XCV1000EFG680-6C XC2S150PQ208-5C XC2S200ePQ208 XC2S300EPQ208-6C xcv1000efg680 XCV300BG432 2S50E-PQ208-6C XC3S1000-FG456-4C
    Text: LogiCORE PCI32 Interface v3.0 DS206 October 28, 2003 Introduction Data Sheet, v3.0.116 LogiCORE Facts With the Xilinx LogiCORE PCI Interface, a designer can build a customized, fully PCI 2.3-compliant core with the highest possible sustained performance, 528 Mbytes/sec.


    Original     		PCI32 DS206 32-bit, 32-bit 64/32-bit PC32/33 XC2S150pq208 xc2s50-pq208 XCV1000EFG680-6C XC2S150PQ208-5C XC2S200ePQ208 XC2S300EPQ208-6C xcv1000efg680 XCV300BG432 2S50E-PQ208-6C XC3S1000-FG456-4C PDF

    DIN 65536

    Abstract: FA 600 DS2064 DS2064S
    Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V


    Original     		DS2064 DS2064S DIN 65536 FA 600 DS2064 PDF

    DS2068

    Abstract: DS2068S 8K X 8 Static RAM 100N 100NS H000402 for 64K RAM RAM64K 90-2068S DALLAS SOIC PRODUCT CHANGE
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 10, 2000 Product Change Notice – H000402 Subject: Product Obsolescence – DS2068 8K x 8 Static RAM Description of Change: Effective July 10, 2000 Dallas Semiconductor will no longer produce the DS2068 8K x 8 Static


    Original     		H000402 DS2068 DS2068 LH5164A/AH 100NS 90-2068S-000 90-2068S-TRL DS2068S 8K X 8 Static RAM 100N 100NS H000402 for 64K RAM RAM64K 90-2068S DALLAS SOIC PRODUCT CHANGE PDF

    DS2064

    Abstract: DS2064S H50801
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 19, 1995 Subject: PRODUCT CHANGE NOTICE – H50801 Description: DS2064 and DS2064S Change Description of Change: This change affects DS2064 and DS2064S devices only. Operating current (Icco) will change to 70mA


    Original     		H50801 DS2064 DS2064S 200ns, 200ns 150ns 70ning H50801 PDF

    DS1265W

    Abstract: DS2065W DS2065W-100
    Text: Rev 2; 10/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


    Original     		DS2065W 256-ball DS2065W DS1265W DS2065W-100 PDF

    CS8952

    Abstract: CS8952T 0x19
    Text: Errata: CS8952 - Silicon revision: F Reference CS8952 Data Sheet revision DS206PP3 dated October 2001. Link Status Change Interrupt Description The datasheets for the CS8952 and CS8952T state that an interrupt can be generated on a link status change. This is true for 100 Mbps mode.


    Original     		CS8952 DS206PP3 CS8952T ER206F1 0x19 PDF

    DALLAS SEMICONDUCTOR Ds1235

    Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257


    Original     		E71301 DS2016, DS2064, DS2068, DS2257 DS2257. DS1217 DALLAS SEMICONDUCTOR Ds1235 megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY PDF

    DS2064

    Abstract: DS2064S
    Text: DS2064 DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current NC 1 28 VCC A12 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 • Data Retention Voltage = 5.5V to 2.0V A3 7 22 OE A2 8 21 A10 • Access time equals 200 ns at 5.0V


    Original     		DS2064 DS2064S DS2064 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1; 5/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


    Original     		DS2065W 256-ball DS2065W PDF

    ram 2064

    Abstract: Static RAM 2064
    Text: DS2064 DALLAS SEMICONDUCTOR FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V


    OCR Scan     		DS2064 DS2064 DS2064S 28-PIN ram 2064 Static RAM 2064 PDF

    DS2064

    Abstract: DS2064S
    Text: DS 2064 DALLAS DS2064 8K x 8 Static RAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Low pow er C M OS design • S tandby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 nA max at tA = 60°C V Cc = 3.0V V Cc = 5.5V V q c = 5.5V □ V cc 27 □ WE


    OCR Scan     		DS2064 28-pin DS2064S DS2064 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2064, DS2064S DALLAS SEMICONDUCTOR DS2064, DS2064S 8K x 8 FEATURES 3V Operation Static RAM PIN ASSIGNMENT • Low power CMOS design • Standby current NC C 1 28 A12 C 2 27 A7 C 3 26 A 6C 4 25 A5 L 5 24 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V


    OCR Scan     		DS2064, DS2064S 28-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □ CE2 25 □


    OCR Scan     		DS2064 PDF

    DS206

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIG NM ENT FEATURES Vcc 24 = 6 23 □ A11 7 22 □ • Data Retention Voltage OE A2 C 8 21 □ A10 A1 C 9 20 □ ceT 10 19 □ DQ7 27 C E 3 26 4 25 A5 C 5 A4 C A3 C A7 A6 5.5V to 2.0V • Access time equals 150 ns at 5.0V and 300 ns at 3.0V


    OCR Scan     		DS2064 28-pin DS2064S DS206 PDF

    Static RAM 2064

    Abstract: 2064 eprom
    Text: D S 2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA m ax at 100 nA max at 1 nA m ax at tA = 25°C tA = 25°C tA = 60°C V Cc = 3.0V V Cc = 5.5V V c c = 5.5V Vcc □ WE 3 26 □


    OCR Scan     		DS2064 Static RAM 2064 2064 eprom PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2064 8K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current NC C 1 28 3 Vcc A12 C 2 27 3 WË A7 C 3 26 3 CE2 A6 C 4 25 D A8 3 3 3 3 3 3 3 3 3 3 50 nA max at tA = 25°C Vcc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V


    OCR Scan     		DS2064 DS2064S 28-PIN 28-PIN 2bl4130 PDF

    2064 ram

    Abstract: No abstract text available
    Text: DS2064 DALLAS s e m ic o n d u c to r FEATURES DS2064 8K x 8 Static RAM PIN ASSIGNMENT • Low power CM OS design • Standby current 50 nA max at tA = 25°C 100 nA max at tA = 25°C 1 max at tA = 60°C Vc c = 3.0V V qq = 5.5V Vc c = 5.5V • Full operation for V c c = 4.5V to 5.5V


    OCR Scan     		DS2064 DS2064 DS2064S 28-PIN 2064 ram PDF

    Untitled

    Abstract: No abstract text available
    Text: DS2064 DALLAS SEMICONDUCTOR DS2064 8K x 8 Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design 28 □ V cc A12 C 2 27 □ WE A7 C 3 28 CE2 A6 L 4 25 A5 L_ 5 24 A4 C 6 23 ASC 7 22 J 3 J J J A2 C S 21 n A10 A1 C 9 20 AC u 10 19 DQ0 L 11 OQ1 C 12 OQ2 C


    OCR Scan     		DS2064 28-pin DS2064 65536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V


    OCR Scan     		DS2064 28-PIN 2L1413D PDF