EHA07215 Search Results

EHA07215 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BF1005SR Abstract: BF1005 BF1005S BF1005SW Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW	PDF
BF1005 Abstract: VPS05178 Text: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178	PDF
BF1009SR Abstract: No abstract text available Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR	PDF
BF1009SW Abstract: No abstract text available Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW	PDF
VPS05178 Abstract: No abstract text available Text: BF 1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	1009S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178	PDF
a 1009 Abstract: VPS05178 Text: BF 1009 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9 V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05178 EHA07215 OT-143 May-05-1999 200MHz a 1009 VPS05178	PDF
1012S Abstract: VPS05178 Text: BF 1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	1012S VPS05178 EHA07215 OT-143 Dec-06-1999 200MHz 1012S VPS05178	PDF
BF1005S Abstract: VPS05178 Text: BF1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178	PDF
BF1005SR Abstract: marking NZs Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs	PDF
BF1005SR Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1009SW Abstract: BF1009S BF1009SR BF1009W Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W	PDF
VPS05178 Abstract: No abstract text available Text: BF 1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178	PDF
BF1009S Abstract: VPS05178 Text: BF1009S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 9V Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178	PDF
BF1009SW Abstract: marking g1s Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s	PDF

1009SW Abstract: No abstract text available Text: BF 1009SW Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	1009SW VPS05605 EHA07215 OT-343 May-05-1999 200MHz 1009SW	PDF
VPS05178 Abstract: No abstract text available Text: BF 1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	1005S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178	PDF
Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1009SW Abstract: BF1009 marking code g2s Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s	PDF
bf1012s Abstract: BF1012 VPS05178 Text: BF1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178	PDF
a31s Abstract: No abstract text available Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	EHA07215 Q62702-F1487 OT-143 200MHz a31s	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network , D rain AG C o - X . HF oInput G2 I H F Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	EHA07215 62702-F1487 200MHz	PDF
Untitled Abstract: No abstract text available Text: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215	OCR Scan	EHA07215 Q62702-F1613 OT-143 200MHz	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network X AGC o HF o Input Drain G2 ! HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	EHA07215 T-143 62702-F1498	PDF
siemens MOSFET 14 Abstract: Marking G1s Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s	PDF

Privacy Settings

EHA07215 Search Results

EHA07215 Datasheets Context Search

BF1005SR

BF1005

BF1009SR

BF1009SW

VPS05178

a 1009

1012S

BF1005S

BF1005SR

BF1005SR

BF1009SW

VPS05178

BF1009S

BF1009SW

1009SW

VPS05178

Untitled

BF1009SW

bf1012s

a31s

Untitled

Untitled

Untitled

siemens MOSFET 14