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    BF1005S Search Results

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    BF1005S Price and Stock

    Infineon Technologies AG BF1005SE6433XT

    RF MOSFET 5V SOT143
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF1005SE6433XT Reel 20,000
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    Infineon Technologies AG BF-1005SR-E6327

    RF MOSFET 5V SOT143R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF-1005SR-E6327 Reel 15,000
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    Infineon Technologies AG BF1005SE6327HTSA1

    RF MOSFET 5V SOT143
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF1005SE6327HTSA1 Reel
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    Rochester Electronics BF1005SE6327HTSA1 6,000 1
    • 1 $0.0694
    • 10 $0.0694
    • 100 $0.0652
    • 1000 $0.059
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    Rochester Electronics LLC BF1005SE6327HTSA1

    RF MOSFET 5V SOT143
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF1005SE6327HTSA1 Bulk 4,157
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    Essentra Components BF-1005

    Screw-On Feet - Base Diameter - 50 mm (1.970 in) - Base Height - 12.0 mm (0.472 in) - Base Material - ABS - Base Shape - Round
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BF-1005
    • 1 -
    • 10 $5.65
    • 100 $4.38
    • 1000 $2.17
    • 10000 $1.81
    Buy Now

    BF1005S Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF1005S Infineon Technologies TRANS MOSFET N-CH 8V 0.025A 4SOT143 Original PDF
    BF1005S Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF1005S Infineon Technologies Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.6 dB; Original PDF
    BF1005S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BF1005S Siemens Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Original PDF
    BF1-005-S500-11 E-tec Interconnect Connector: Wire to Board Connector: F: 5: 2.54: THRU Original PDF
    BF1005SE6327 Infineon Technologies FET Transistor, Enhancement, N Channel, ID 0.025A, Tape And Reel Original PDF
    BF1005SE6327 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF1005SE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF1005SE6433 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF 1005SE6433 Infineon Technologies FET Misc, SOT-143, 4-Pin Original PDF
    BF1005SE6433XT Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF1005SR Infineon Technologies Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.6 dB; Original PDF
    BF1005SR Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF1005SR Infineon Technologies Dual-MOS FET Monolithic Integrated Circuit Original PDF
    BF1005SRE6327 Infineon Technologies TRANS MOSFET N-CH 8V 0.025A 4SOT143 T/R Original PDF
    BF 1005SR E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-143R Original PDF
    BF1005SRE6327 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143R Original PDF
    BF1005SW Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF

    BF1005S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF1005SR

    Abstract: BF1005 BF1005S BF1005SW
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW

    BF1005S

    Abstract: VPS05178
    Text: BF1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178

    BF1005SR

    Abstract: marking NZs
    Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    sot143 marking code G2

    Abstract: G2 MARKING CODE 5 PIN
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S, sot143 marking code G2 G2 MARKING CODE 5 PIN

    BFP181

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. BF1005S BF1005SR OT143 OT143R BFP181

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original
    PDF BF1005S. BF1005S OT143 BF1005SR OT143R

    BF1005SR

    Abstract: BF1005S BF1005SW BFP181 BFP181R
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original
    PDF BF1005S. BF1005S OT143 BF1005SR OT143R BF1005SR BF1005S BF1005SW BFP181 BFP181R

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


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    PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan
    PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor