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    EPA160B Search Results

    EPA160B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA160B Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA160B-100F Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA160B-100P Excelics Semiconductor High Efficiency Heterojuction FETs Original PDF

    EPA160B Datasheets Context Search

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    EPA160B

    Abstract: No abstract text available
    Text: EPA160B High Efficiency Heterojunction Power FET FEATURES 540 50 • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,


    Original     		PDF EPA160B 18GHz 12GHz EPA160B

    EPA160B-100F

    Abstract: No abstract text available
    Text: Excelics EPA160B-100F DATA SHEET High Efficiency Heterojunction Power FET  7<3   7<3  All Dimensions In mils MIN TYP Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression


    Original     		PDF EPA160B-100F 12GHz EPA160B-100F

    EPA160B-100P

    Abstract: 100MIL
    Text: EPA160B-100P High Efficiency Heterojunction Power FET UPDATED 05/05/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 10dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA160B-100P 100MIL 12GHz 18GHz 175oC -65/175oC EPA160B-100P

    EPA160B

    Abstract: No abstract text available
    Text: Excelics EPA160B DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA160B 18GHz 12GHz EPA160B

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C