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    FLC087XP Search Results

    FLC087XP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLC087XP Fujitsu GaAs FET & HEMT Chip Original PDF
    FLC087XP-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF

    FLC087XP Datasheets Context Search

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    FLC087XP

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		PDF FLC087XP FLC087XP

    GaAs FET HEMT Chips

    Abstract: Fujitsu 511 FLC08
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		PDF FLC087XP FLC087XP FCSI0598M200 GaAs FET HEMT Chips Fujitsu 511 FLC08

    Untitled

    Abstract: No abstract text available
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		PDF FLC087XP FLC087XP

    GaAs FET HEMT Chips

    Abstract: GaAs FET chip FLC087XP C-Band Power GaAs FET HEMT Chips
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		PDF FLC087XP FLC087XP GaAs FET HEMT Chips GaAs FET chip C-Band Power GaAs FET HEMT Chips

    FLC087XP

    Abstract: FUJITSU RF 053 GaAs FET HEMT Chips
    Text: FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general


    Original     		PDF FLC087XP FLC087XP 17serve FCSI0598M200 FUJITSU RF 053 GaAs FET HEMT Chips

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    Untitled

    Abstract: No abstract text available
    Text: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION


    OCR Scan     		PDF FLC087XP FLC087XP FCSI0598M200