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Abstract: No abstract text available
Text: XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
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N-channel Power MOSFET with low on-state resistance
Abstract: XP161A1355PR
Text: XP161A1355PR-G ETR1124_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
OT-89products
N-channel Power MOSFET with low on-state resistance
XP161A1355PR
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XP161A1355PR
Abstract: No abstract text available
Text: XP161A1355PR ETR1124_001 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR
ETR1124
XP161A1355PR
OT-89
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XP161A1355PR
Abstract: marking 4a sot-89
Text: XP161A1355PR-G ETR1124_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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Original
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
XP161A1355PR
marking 4a sot-89
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XP161A11A1PR
Abstract: XP161A1355PR
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.05Ω MAX. ◆Ultra High-Speed Switching ◆SOT-89 Package ◆Gate Protect Diode Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP161A1355PR is an N-channel Power MOSFET with low
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OT-89
XP161A1355PR
OT-89
XP161A1355PR
XP161A11A1PR
XP161A11A1PR
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