Untitled
Abstract: No abstract text available
Text: FAP450 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)180# Minimum Operating Temp (øC)
|
Original
|
PDF
|
FAP450
|
Untitled
Abstract: No abstract text available
Text: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
|
Original
|
PDF
|
FAP-450
to733-1700
|
FAP-450
Abstract: No abstract text available
Text: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
|
Original
|
PDF
|
FAP-450
to733-1700
FAP-450
|
IRF 3250
Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor
|
Original
|
PDF
|
EC350
G2-1B02-TT
H23LTI
HCTL-2016
220N60C3D
G2-1A05-TT
H21A1
HCPL-4506
HGTG30N60C3
G2-1A06-ST
IRF 3250
IRf 334
irf 1402
irf 2117
cry 152
H22B1
EFG13C
ec75
HFA16PB120
FA57SA50LC
|
FAP-450
Abstract: No abstract text available
Text: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
|
Original
|
PDF
|
FAP-450
FAP-450
|
2sk2645
Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R
|
OCR Scan
|
PDF
|
2SK2638-01MR
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2640-01MR
2SK27S7-01
O-220
2SK27S8-01L
2SK2641-01
2sk2645
2SK2648
2SK2655
2SK2759-01R
TO-3PF
2SK2761
2SK2761-01MR
2SK2769-01MR
|
Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R
|
OCR Scan
|
PDF
|
2SK2638-01MR
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2640-01MR
2SK27S7-01
2SK2758-01L
2SK2641-01
FAP450
|
2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
|
OCR Scan
|
PDF
|
T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
|
Untitled
Abstract: No abstract text available
Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01
|
OCR Scan
|
PDF
|
2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
|
2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
|
OCR Scan
|
PDF
|
F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
|
2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
PDF
|
2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
|
2SK1014-01
Abstract: 2SK151
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
PDF
|
2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
2SK1014-01
2SK151
|
FAP-450
Abstract: diode sy 170/20
Text: FUJI FAP-450 N-channel MOS-FET 500V 0,38i2 1 4 A 1 9 0 W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V Gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5
|
OCR Scan
|
PDF
|
FAP-450
00Gb3b2
FAP-450
RG-50
diode sy 170/20
|
Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
|
OCR Scan
|
PDF
|
2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
|
|
|
2sk1507
Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
PDF
|
2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2sk1507
2SK956
2SK1011
2SK1012
2SK1016
2SK1082
2SK1217
2SK1916
2SK962
|
2SK2642-01MR
Abstract: 2SK2652 2SK2876-01MR
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package
|
OCR Scan
|
PDF
|
2SK2872-01MR
2SK2870-01L
2SK2871-01
2SK2873-01
2SK2638-01
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2876-01MR
2SK2642-01MR
2SK2652
|