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Rochester Electronics LLC FCH25N60N POWER FIELD-EFFECT TRANSISTOR, 2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCH25N60N	Bulk			80	1 - 10 - 100 $3.75 1000 $3.75 10000 $3.75	Buy Now
onsemi FCH25N60N MOSFET N-CH 600V 25A TO247-3
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DigiKey	FCH25N60N	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FCH25N60N		1,163		1	1 $3.61 10 $3.61 100 $3.39 1000 $3.07 10000 $3.07	Buy Now
TME	FCH25N60N				1	1 $6.11 10 $5.5 100 $4.86 1000 $4.36 10000 $4.36	Get Quote
Fairchild Semiconductor Corporation FCH25N60N Power Field-Effect Transistor, 25A, 600V, 0.126ohm, N-Channel, MOSFET, TO-247AB '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FCH25N60N		7,013		1	1 $3.61 10 $3.61 100 $3.39 1000 $3.07 10000 $3.07	Buy Now

FCH25N60N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FCH25N60N		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A TO-247		Original	PDF

FCH25N60N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FCH25N60N Abstract: No abstract text available Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling	Original	FCH25N60N FCH25N60N	PDF
Untitled Abstract: No abstract text available Text: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	FCH25N60N	PDF
FCH25N60 Abstract: No abstract text available Text: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from	Original	FCH25N60N FCH25N60N FCH25N60	PDF
FCH25N60 Abstract: FCH25N60N mosfet 600V 25A TO247s Text: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling	Original	FCH25N60N FCH25N60N FCH25N60 mosfet 600V 25A TO247s	PDF
Untitled Abstract: No abstract text available Text: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior	Original	FCH25N60N FCH25N60N	PDF
Untitled Abstract: No abstract text available Text: SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling	Original	FCH25N60N FCH25N60N	PDF