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    FDB024N08BL7 Price and Stock

    onsemi FDB024N08BL7

    MOSFET N-CH 80V 120A TO263-7
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    Future Electronics FDB024N08BL7 Reel 4,000 29 Weeks 800
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    Onlinecomponents.com FDB024N08BL7
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    Rochester Electronics FDB024N08BL7 3,200 1
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    TME FDB024N08BL7 1
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    NexGen Digital FDB024N08BL7 1,600
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    Richardson RFPD FDB024N08BL7 800
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    Fairchild Semiconductor Corporation FDB024N08BL7

    Synchronous Rectification for ATX / Server / Telecom PSU
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    Win Source Electronics FDB024N08BL7 11,100
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    FDB024N08BL7 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB024N08BL7 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 120A D2PAK7 Original PDF

    FDB024N08BL7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JESD22-A113F

    Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
    Text: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB024N08BL7 FDB024N08BL7 JESD22-A113F J-STD-020D Fdb020n08 N_CHANNEL MOSFET 100V MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 mΩ Features Description • RDS on = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDB024N08BL7 PDF