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    JESD22-A113F

    Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
    Text: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


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    PDF FDB024N08BL7 FDB024N08BL7 JESD22-A113F J-STD-020D Fdb020n08 N_CHANNEL MOSFET 100V MOSFET