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FDU6N25 Price and Stock

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onsemi FDU6N25 MOSFET N-CH 250V 4.4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDU6N25	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FDU6N25	Tube		0 Weeks, 2 Days	3,334	1 - 10 - 100 - 1000 - 10000 $0.17925	Buy Now
Rochester Electronics	FDU6N25		11,072		1	1 $0.2383 10 $0.2383 100 $0.224 1000 $0.2026 10000 $0.2026	Buy Now
Flip Electronics	FDU6N25		30,757			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC FDU6N25 POWER FIELD-EFFECT TRANSISTOR, 4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDU6N25	Bulk			1,211	1 - 10 - 100 - 1000 - 10000 $0.25	Buy Now
Flip Electronics FDU6N25 MOSFET N-CH 250V 4.4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDU6N25	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
Fairchild Semiconductor Corporation FDU6N25 Power Field-Effect Transistor, 4.4A, 250V, 1.1ohm, N-Channel, MOSFET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDU6N25		117,474		1	1 $0.2383 10 $0.2383 100 $0.224 1000 $0.2026 10000 $0.2026	Buy Now

FDU6N25 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDU6N25		Fairchild Semiconductor	250V N-Channel MOSFET		Original	PDF
FDU6N25		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A IPAK-3		Original	PDF

FDU6N25 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDU6N25	PDF
6N25 Abstract: TO252-DPAK FDD6N25TM Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK	PDF
Untitled Abstract: No abstract text available Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1  Features Description • RDS on = 1.1  (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDU6N25	PDF
FDD6N25TM Abstract: FDD6N25 FDD6N25TF FDU6N25 Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25	PDF
Untitled Abstract: No abstract text available Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD6N25 FDU6N25	PDF