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    FDU6N25 Search Results

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    FDU6N25 Price and Stock

    Rochester Electronics LLC FDU6N25

    POWER FIELD-EFFECT TRANSISTOR, 4
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    DigiKey FDU6N25 Bulk 7,250 1,211
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    onsemi FDU6N25

    MOSFET N-CH 250V 4.4A IPAK
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    DigiKey FDU6N25 Tube
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    Avnet Americas FDU6N25 Tube 0 Weeks, 2 Days 3,334
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    Rochester Electronics FDU6N25 3,822 1
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    Flip Electronics FDU6N25 30,757
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    Flip Electronics FDU6N25

    MOSFET N-CH 250V 4.4A IPAK
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    DigiKey FDU6N25 Tube 3,000
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    Fairchild Semiconductor Corporation FDU6N25

    Power Field-Effect Transistor, 4.4A, 250V, 1.1ohm, N-Channel, MOSFET, TO-251AA
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    Rochester Electronics FDU6N25 6,594 1
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    FDU6N25 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDU6N25 Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    FDU6N25 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A IPAK-3 Original PDF

    FDU6N25 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDU6N25

    6N25

    Abstract: TO252-DPAK FDD6N25TM
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

    Untitled

    Abstract: No abstract text available
    Text: FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1  Features Description • RDS on = 1.1  (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDU6N25

    FDD6N25TM

    Abstract: FDD6N25 FDD6N25TF FDU6N25
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N25 FDU6N25