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    FHR02FH Search Results

    FHR02FH Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FHR02FH Fujitsu Original PDF
    FHR02FH Fujitsu Super Low Noise HEMT Original PDF
    FHR02FH Unknown High Frequency Device Data Book (Japanese) Scan PDF

    FHR02FH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FHR02FH

    Abstract: fujitsu hemt
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


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    PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt

    FHR02FH

    Abstract: transistor hemt Low Noise HEMT
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


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    PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    Untitled

    Abstract: No abstract text available
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @ f=18G Hz High Associated Gain: 8.5dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold Gate M etallization for High Reliability Herm etically Sealed Package DESCRIPTION


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    PDF FHR02FH FHR02FH 4-22G FCSI0598M200

    t z 1037 802

    Abstract: S2V 97 FHR02FH
    Text: FHR02FH L o w Moïse H E M 1 ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C


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    PDF FHR02FH 4000Q. t z 1037 802 S2V 97 FHR02FH

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


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    PDF

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


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    PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG