FHR02FH
Abstract: fujitsu hemt
Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for
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FHR02FH
18GHz
FHR02FH
4-22GHz
FCSI0598M200
fujitsu hemt
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FHR02FH
Abstract: transistor hemt Low Noise HEMT
Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for
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FHR02FH
18GHz
FHR02FH
4-22GHz
FCSI0598M200
transistor hemt
Low Noise HEMT
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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Untitled
Abstract: No abstract text available
Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @ f=18G Hz High Associated Gain: 8.5dB (Typ.)@ f=18G Hz Lg s 0.25|iim, W g = 200|iim Gold Gate M etallization for High Reliability Herm etically Sealed Package DESCRIPTION
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FHR02FH
FHR02FH
4-22G
FCSI0598M200
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t z 1037 802
Abstract: S2V 97 FHR02FH
Text: FHR02FH L o w Moïse H E M 1 ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C
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FHR02FH
4000Q.
t z 1037 802
S2V 97
FHR02FH
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FHC40LG*
FHX13LG*
FHX14LG*
FHX04LG*
FHX05LG*
FHX06LG*
FHX35LG*
FHR02FH
FSX52WF
GaAs HEMTs X band
FSX017LG
FHX05LG
fhx06lg
FSU01LG
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